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Diodes - Redresseurs - Simples

Dossiers 52 788
Page  683/1 886
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot VS-20WT04FN
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 610mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: 1900pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock16 896
45V
20A
610mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
1900pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-55°C ~ 175°C
hot BAT30JFILM
STMicroelectronics

DIODE SCHOTTKY 30V 300MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 300mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 22pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C (Max)
paquet: SC-76, SOD-323
Stock37 080
30V
300mA (DC)
530mV @ 300mA
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 30V
22pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
VS-1N3767
Vishay Semiconductor Diodes Division

DIODE GEN PURP 900V 35A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 900V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 110A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 900V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 190°C
paquet: DO-203AB, DO-5, Stud
Stock4 720
900V
35A
1.8V @ 110A
Standard Recovery >500ns, > 200mA (Io)
-
3mA @ 900V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 190°C
MBRB16H45HE3_A/P
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 304
45V
16A
660mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 175°C
VS-MBRB735TRRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Capacitance @ Vr, F: 400pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 880
35V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
400pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
EGL41CHE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-213AB, MELF (Glass)
Stock5 200
150V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
UF1A B0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-204AL, DO-41, Axial
Stock5 824
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SS115LHMQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-219AB
Stock5 136
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
FR305
SMC Diode Solutions

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
Request a Quote
600 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 600 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
1N5807URS-TR
Microchip Technology

UFR,FRR

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Request a Quote
50 V
3A
875 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
5 µA @ 50 V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
1N5060
Harris Corporation

DIODE GEN PURP 400V 3A SOD57

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 40pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
400 V
3A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
5 µA @ 400 V
40pF @ 0V, 1MHz
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
HS5K
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock9 000
800 V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
10 µA @ 800 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES5DC-HF
Comchip Technology

DIODE GEN PURP 200V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
200 V
5A
1 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S1M-13-G
Diodes Incorporated

DIODE GENERAL PURPOSE SMA

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
UF5406GP-AP
Micro Commercial Co

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
600 V
3A
1.7 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
10 µA @ 600 V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SK115BH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
150 V
1A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SIDC06D65C8X1SA1
Infineon Technologies

DIODE GEN PURP 650V 20A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 240 nA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
paquet: -
Request a Quote
650 V
20A
1.87 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
240 nA @ 650 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
RL254M-AP
Micro Commercial Co

DIODE GEN PURP 400V 2.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
400 V
2.5A
1 V @ 2.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 400 V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
RS3J-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock4 203
600 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
10 µA @ 600 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MBR1545FA-BP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 45 V
  • Capacitance @ Vr, F: 635pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
45 V
15A
600 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 45 V
635pF @ 4V, 1MHz
Through Hole
TO-220-2 Isolated Tab
ITO-220AC
-55°C ~ 150°C
JAN1N5622US-TR
Microchip Technology

DIODE GEN PURP 1KV 1A D-5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 500 nA @ 1 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 200°C
paquet: -
Request a Quote
1000 V
1A
1.3 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
500 nA @ 1 V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
ES2JFSH
Taiwan Semiconductor Corporation

35NS, 2A, 600V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 21pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock42 000
600 V
2A
1.7 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 600 V
21pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
HT14GH
Taiwan Semiconductor Corporation

50NS, 1A, 300V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock15 000
300 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 300 V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
VS-45EPS12LHM3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 45A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: -
Stock390
1200 V
45A
1.14 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1200 V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
RB088LAM-60TR
Rohm Semiconductor

DIODE SCHOTTKY 60V 5A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C
paquet: -
Stock21 816
60 V
5A
710 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4 µA @ 60 V
-
Surface Mount
SOD-128
PMDTM
150°C
PMEG3002AELD-QYL
Nexperia USA Inc.

PMEG3002AELD-Q/SOD882D/XSON2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 10 V
  • Capacitance @ Vr, F: 18pF @ 1V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-XDFN
  • Supplier Device Package: DFN1006D-2
  • Operating Temperature - Junction: 150°C
paquet: -
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30 V
200mA
480 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
6 ns
10 µA @ 10 V
18pF @ 1V, 1MHz
Surface Mount, Wettable Flank
2-XDFN
DFN1006D-2
150°C
BAS316HE3-TP
Micro Commercial Co

DIODE GEN PURP 100V 250MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
Stock8 952
100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
1 µA @ 75 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-65°C ~ 150°C
DSK110
MDD

DIODE SCHOTTKY 100V 1A SOD123FL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 100 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: -
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100 V
1A
850 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 100 V
80pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 125°C