Page 670 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSB1A40	Microsemi Corporation	DIODE SCHOTTKY 40V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	paquet: DO-204AL, DO-41, Axial	Stock7 024	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
HS247200	Microsemi Corporation	DIODE MODULE 200V 240A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 200V Capacitance @ Vr, F: 6000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	paquet: HALF-PAK	Stock2 800	200V	240A	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 200V	6000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
DSEP8-03A	IXYS	DIODE GEN PURP 300V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 60µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-220-2	Stock7 120	300V	10A	1.75V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	60µA @ 300V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
MURH10020R	GeneSiC Semiconductor	DIODE MODULE 200V 100A D-67 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	paquet: D-67	Stock4 944	200V	100A	1.3V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 50V	-	Chassis Mount	D-67	D-67	-
SRA830HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	paquet: TO-220-2	Stock3 904	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SR804HA0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	paquet: DO-201AD, Axial	Stock4 208	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SF4006-TR	Vishay Semiconductor Diodes Division	DIODE AVAL 1A 800V SOD-57 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-57, Axial	Stock4 480	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
AK 06	Sanken	DIODE SCHOTTKY 60V 700MA AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 620mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	paquet: Axial	Stock5 776	60V	700mA	620mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Through Hole	Axial	-	-40°C ~ 150°C
RBE05VM20ATE-17	Rohm Semiconductor	DIODE SCHOTTKY 20V 500MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	paquet: SC-90, SOD-323F	Stock2 832	20V	500mA	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
ESH1D M2G	TSC America Inc.	DIODE, ULTRA FAST, 1A, 200V, 15N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-214AC, SMA	Stock3 680	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
FR106G R1G	TSC America Inc.	DIODE, FAST, 1A, 800V, 500NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock4 368	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4148WS-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	paquet: SC-76, SOD-323	Stock36 000	75V	150mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100µA @ 100V	-	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
S1JHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock4 000	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SE10DJ-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: 67pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock34 410	600V	3A	1.15V @ 10A	Standard Recovery >500ns, > 200mA (Io)	3µs	15µA @ 600V	67pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
BY448TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1500V 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20µs Current - Reverse Leakage @ Vr: 3µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: 140°C (Max)	paquet: SOD-57, Axial	Stock22 680	1500V	2A	1.6V @ 3A	Standard Recovery >500ns, > 200mA (Io)	20µs	3µA @ 1500V	-	Through Hole	SOD-57, Axial	SOD-57	140°C (Max)
SB01-15C-TB-E	ON Semiconductor	DIODE SCHOTTKY 150V 100MA 3CP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 50µA @ 75V Capacitance @ Vr, F: 7pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C	paquet: TO-236-3, SC-59, SOT-23-3	Stock4 288	150V	100mA	750mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	10ns	50µA @ 75V	7pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP	-55°C ~ 125°C
1N2258A	Microchip Technology	DIODE GEN PURP 600V 22A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 22A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	paquet: -	Request a Quote	600 V	22A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
SIDC05D60C8X7SA2	Infineon Technologies	DIODE GEN PURP 600V 15A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	paquet: -	Request a Quote	600 V	15A	1.95 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
JANTXV1N5711UB-TR	Microchip Technology	DIODE SCHOTTKY 50V UB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	50 V	-	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	4-SMD, No Lead	UB	-65°C ~ 150°C
UES1105HR2-TR	Microchip Technology	DIODE GEN PURP 300V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -	paquet: -	Request a Quote	300 V	2A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	-	-	Through Hole	A, Axial	A, Axial	-
RB160LAM-40TFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	paquet: -	Stock8 835	40 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
M1583VF450	IXYS	DIODE GEN PURP 4.5KV 1583A W43 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 1583A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 2000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 150 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: W43 Operating Temperature - Junction: -40°C ~ 150°C	paquet: -	Request a Quote	4500 V	1583A	2.8 V @ 2000 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	150 mA @ 4500 V	-	Chassis Mount	DO-200AD	W43	-40°C ~ 150°C
S4D04120A	SMC Diode Solutions	DIODE SIL CARB 1.2KV 4A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Capacitance @ Vr, F: 302pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock1 986	1200 V	4A	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	302pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC (TO-220-2)	-55°C ~ 175°C
R5010610XXWA	Powerex Inc.	DIODE GP REV 600V 100A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7 µs Current - Reverse Leakage @ Vr: 30 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	paquet: -	Request a Quote	600 V	100A	-	Standard Recovery >500ns, > 200mA (Io)	7 µs	30 mA @ 600 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
PMEG120G10ELR-QX	Nexperia USA Inc.	DIODE GEN PURP 120V 1A SOD123W Diode Type: SiGe (Silicon Germanium) Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Current - Reverse Leakage @ Vr: 30 nA @ 120 V Capacitance @ Vr, F: 36pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	paquet: -	Stock31 656	120 V	1A	840 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	12 ns	30 nA @ 120 V	36pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
JANS1N5822	Semtech Corporation	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	paquet: -	Request a Quote	40 V	3A	525 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 125°C
AR1FMHM3-H	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 1KV 1A DO219AB Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock53 715	1000 V	1A	1.6 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	1 µA @ 1000 V	9.3pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
STD10300	SMC Diode Solutions	10A,300V,DPAK, TRENCH SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

DSB1A40

Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

paquet: DO-204AL, DO-41, Axial

Stock7 024

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

HS247200

Microsemi Corporation

DIODE MODULE 200V 240A HALF-PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8mA @ 200V
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

paquet: HALF-PAK

Stock2 800

200V

240A

860mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

8mA @ 200V

6000pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

-

DSEP8-03A

IXYS

DIODE GEN PURP 300V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 60µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-2

Stock7 120

300V

10A

1.75V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

60µA @ 300V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

MURH10020R

GeneSiC Semiconductor

DIODE MODULE 200V 100A D-67

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

paquet: D-67

Stock4 944

200V

100A

1.3V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 50V

-

Chassis Mount

D-67

-

SRA830HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

paquet: TO-220-2

Stock3 904

30V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 125°C

SR804HA0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

paquet: DO-201AD, Axial

Stock4 208

40V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

SF4006-TR

Vishay Semiconductor Diodes Division

DIODE AVAL 1A 800V SOD-57

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-57, Axial

Stock4 480

800V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

AK 06

Sanken

DIODE SCHOTTKY 60V 700MA AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 620mV @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

paquet: Axial

Stock5 776

60V

700mA

620mV @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

-

Through Hole

Axial

-

-40°C ~ 150°C

RBE05VM20ATE-17

Rohm Semiconductor

DIODE SCHOTTKY 20V 500MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)

paquet: SC-90, SOD-323F

Stock2 832

20V

500mA

430mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

SC-90, SOD-323F

UMD2

125°C (Max)

ESH1D M2G

TSC America Inc.

DIODE, ULTRA FAST, 1A, 200V, 15N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214AC, SMA

Stock3 680

200V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

1µA @ 200V

16pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

FR106G R1G

TSC America Inc.

DIODE, FAST, 1A, 800V, 500NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock4 368

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

1N4148WS-HE3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

paquet: SC-76, SOD-323

Stock36 000

75V

150mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100µA @ 100V

-

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

S1JHE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock4 000

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 600V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SE10DJ-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock34 410

600V

3A

1.15V @ 10A

Standard Recovery >500ns, > 200mA (Io)

3µs

15µA @ 600V

67pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

BY448TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1500V 2A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20µs
Current - Reverse Leakage @ Vr: 3µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)

paquet: SOD-57, Axial

Stock22 680

1500V

2A

1.6V @ 3A

Standard Recovery >500ns, > 200mA (Io)

20µs

3µA @ 1500V

-

Through Hole

SOD-57, Axial

SOD-57

140°C (Max)

SB01-15C-TB-E

ON Semiconductor

DIODE SCHOTTKY 150V 100MA 3CP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 50µA @ 75V
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C

paquet: TO-236-3, SC-59, SOT-23-3

Stock4 288

150V

100mA

750mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

10ns

50µA @ 75V

7pF @ 10V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

-55°C ~ 125°C

1N2258A

Microchip Technology

DIODE GEN PURP 600V 22A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 22A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

paquet: -

Request a Quote

600 V

22A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

SIDC05D60C8X7SA2

Infineon Technologies

DIODE GEN PURP 600V 15A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

paquet: -

Request a Quote

600 V

15A

1.95 V @ 15 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-40°C ~ 175°C

JANTXV1N5711UB-TR

Microchip Technology

DIODE SCHOTTKY 50V UB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

50 V

-

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

2pF @ 0V, 1MHz

Surface Mount

4-SMD, No Lead

UB

-65°C ~ 150°C

UES1105HR2-TR

Microchip Technology

DIODE GEN PURP 300V 2A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -

paquet: -

Request a Quote

300 V

2A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

-

Through Hole

A, Axial

-

RB160LAM-40TFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

paquet: -

Stock8 835

40 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

M1583VF450

IXYS

DIODE GEN PURP 4.5KV 1583A W43

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 1583A
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 2000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: W43
Operating Temperature - Junction: -40°C ~ 150°C

paquet: -

Request a Quote

4500 V

1583A

2.8 V @ 2000 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

150 mA @ 4500 V

-

Chassis Mount

DO-200AD

W43

-40°C ~ 150°C

S4D04120A

SMC Diode Solutions

DIODE SIL CARB 1.2KV 4A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Capacitance @ Vr, F: 302pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Stock1 986

1200 V

4A

1.8 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 1200 V

302pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC (TO-220-2)

-55°C ~ 175°C

R5010610XXWA

Powerex Inc.

DIODE GP REV 600V 100A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7 µs
Current - Reverse Leakage @ Vr: 30 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

paquet: -

Request a Quote

600 V

100A

-

Standard Recovery >500ns, > 200mA (Io)

7 µs

30 mA @ 600 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

PMEG120G10ELR-QX

Nexperia USA Inc.

DIODE GEN PURP 120V 1A SOD123W

Diode Type: SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C

paquet: -

Stock31 656

120 V

1A

840 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

12 ns

30 nA @ 120 V

36pF @ 1V, 1MHz

Surface Mount

SOD-123W

175°C

JANS1N5822

Semtech Corporation

DIODE SCHOTTKY 40V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

paquet: -

Request a Quote

40 V

3A

525 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 125°C

AR1FMHM3-H

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 1KV 1A DO219AB

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Stock53 715

1000 V

1A

1.6 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

120 ns

1 µA @ 1000 V

9.3pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

STD10300

SMC Diode Solutions

10A,300V,DPAK, TRENCH SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-