Page 489 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RS2M-13	Diodes Incorporated	DIODE GEN PURP 1KV 1.5A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-214AA, SMB	Stock4 624	1000V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
MBRD1040-T	Diodes Incorporated	DIODE SCHOTTKY 40V 10A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4 784	40V	10A	510mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 35V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-65°C ~ 150°C
R6020235ESYA	Powerex Inc.	DIODE GEN PURP 200V 350A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 350A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -45°C ~ 150°C	paquet: DO-205AB, DO-9, Stud	Stock3 712	200V	350A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-45°C ~ 150°C
JANTXV1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	paquet: A, Axial	Stock3 904	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
MBR6030	GeneSiC Semiconductor	DIODE SCHOTTKY 30V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-203AB, DO-5, Stud	Stock2 768	30V	60A	650mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
NRVBS330T3G	ON Semiconductor	DIODE SCHOTTKY 30V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-214AB, SMC	Stock4 128	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
SBR8B60P5-7D	Diodes Incorporated	DIODE SBR 60V 5A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 600mV @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 220µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	paquet: PowerDI? 5	Stock6 064	60V	5A	600mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	220µA @ 60V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
SGL41-20HE3/96	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 125°C	paquet: DO-213AB, MELF	Stock5 024	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
SS3P6LHM3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock5 024	60V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 50V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
MURS140-M3/5BT	Vishay Semiconductor Diodes Division	DIODE RECT 1A 400V 50NS DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-214AA, SMB	Stock6 512	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 175°C
S2G/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AA, SMB	Stock5 616	400V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1AHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock6 352	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
IMBD4448-G3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 70V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	paquet: TO-236-3, SC-59, SOT-23-3	Stock4 912	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 70V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
RBR2MM60BTR	Rohm Semiconductor	DIODE SCHOTTKY 60V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	paquet: SOD-123F	Stock5 424	60V	2A	580mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
S2M-LTP	Micro Commercial Co	DIODE GEN PURP 1KV 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AA, SMB	Stock3 936	1000V	2A	1.15V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 1000V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CDBMT1100-HF	Comchip Technology	DIODE SCHOTTKY 100V 1A SOD123H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 150°C	paquet: SOD-123H	Stock236 040	100V	1A (DC)	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	120pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 150°C
WNSC2D08650TJ	WeEn Semiconductors	DIODE SIL CARBIDE 650V 8A 5DFN Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C	paquet: -	Request a Quote	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	260pF @ 1V, 1MHz	Surface Mount	4-VSFN Exposed Pad	5-DFN (8x8)	175°C
SMD24HL-TP	Micro Commercial Co	TVS DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 125pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HL Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Request a Quote	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	125pF @ 0V, 1MHz	Surface Mount	SOD-123H	SOD-123HL	-55°C ~ 125°C
RHRU501200	Harris Corporation	RECTIFIER DIODE, AVALANCHE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S2M-AQ	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	paquet: -	Request a Quote	1000 V	2A	1.15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1000 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
RB521S30YL	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: 20pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max)	paquet: -	Stock22 920	30 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	30 µA @ 10 V	20pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C (Max)
1N4448HWSQ-7-F	Diodes Incorporated	DIODE GP 80V 250MA SOD323 3K Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 80 V Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Stock9 000	80 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 80 V	3.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
MUR8100EH	onsemi	DIODE GEN PURP 1KV 8A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 25 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	1000 V	8A	1.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	25 µA @ 1000 V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
SL44HE3_B-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Stock216	40 V	8A	500 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SF66G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock7 500	400 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
JANS1N6677-1	Microchip Technology	DIODE SCHOTTKY 40V 200MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 700 mV @ 630 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	40 V	200mA	700 mV @ 630 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 150°C
BAS19-HE3_A-18	Vishay	SWITCHING DIODE GENPURP SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 100 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C	paquet: -	Request a Quote	100 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 100 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C
GSGP0230S	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, 2A, 30V, ES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 30 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock17 001	30 V	2A	620 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	120pF @ 4V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-55°C ~ 150°C

RS2M-13

Diodes Incorporated

DIODE GEN PURP 1KV 1.5A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AA, SMB

Stock4 624

1000V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

MBRD1040-T

Diodes Incorporated

DIODE SCHOTTKY 40V 10A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4 784

40V

10A

510mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 35V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-65°C ~ 150°C

R6020235ESYA

Powerex Inc.

DIODE GEN PURP 200V 350A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 350A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -45°C ~ 150°C

paquet: DO-205AB, DO-9, Stud

Stock3 712

200V

350A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 200V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-45°C ~ 150°C

JANTXV1N5614

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

paquet: A, Axial

Stock3 904

200V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 200V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

MBR6030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 60A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AB, DO-5, Stud

Stock2 768

30V

60A

650mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

NRVBS330T3G

ON Semiconductor

DIODE SCHOTTKY 30V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AB, SMC

Stock4 128

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 40V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 150°C

SBR8B60P5-7D

Diodes Incorporated

DIODE SBR 60V 5A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 220µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

paquet: PowerDI? 5

Stock6 064

60V

5A

600mV @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

220µA @ 60V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

SGL41-20HE3/96

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -55°C ~ 125°C

paquet: DO-213AB, MELF

Stock5 024

20V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

110pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-55°C ~ 125°C

SS3P6LHM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock5 024

60V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 50V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

MURS140-M3/5BT

Vishay Semiconductor Diodes Division

DIODE RECT 1A 400V 50NS DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-214AA, SMB

Stock6 512

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 400V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 175°C

S2G/1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

Stock5 616

400V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 400V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

S1AHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock6 352

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 50V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

IMBD4448-G3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 70V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)

paquet: TO-236-3, SC-59, SOT-23-3

Stock4 912

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

2.5µA @ 70V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C (Max)

RBR2MM60BTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

paquet: SOD-123F

Stock5 424

60V

2A

580mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

S2M-LTP

Micro Commercial Co

DIODE GEN PURP 1KV 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

Stock3 936

1000V

2A

1.15V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 1000V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CDBMT1100-HF

Comchip Technology

DIODE SCHOTTKY 100V 1A SOD123H

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C

paquet: SOD-123H

Stock236 040

100V

1A (DC)

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

120pF @ 4V, 1MHz

Surface Mount

SOD-123H

-55°C ~ 150°C

WNSC2D08650TJ

WeEn Semiconductors

DIODE SIL CARBIDE 650V 8A 5DFN

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C

paquet: -

Request a Quote

650 V

8A

1.7 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

260pF @ 1V, 1MHz

Surface Mount

4-VSFN Exposed Pad

5-DFN (8x8)

175°C

SMD24HL-TP

Micro Commercial Co

TVS DIODES

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 125°C

paquet: -

Request a Quote

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

125pF @ 0V, 1MHz

Surface Mount

SOD-123H

SOD-123HL

-55°C ~ 125°C

RHRU501200

Harris Corporation

RECTIFIER DIODE, AVALANCHE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-

S2M-AQ

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C

paquet: -

Request a Quote

1000 V

2A

1.15 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 1000 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-50°C ~ 150°C

RB521S30YL

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)

paquet: -

Stock22 920

30 V

200mA

500 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

30 µA @ 10 V

20pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

150°C (Max)

1N4448HWSQ-7-F

Diodes Incorporated

DIODE GP 80V 250MA SOD323 3K

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Stock9 000

80 V

250mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

100 nA @ 80 V

3.5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

MUR8100EH

onsemi

DIODE GEN PURP 1KV 8A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

1000 V

8A

1.8 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

25 µA @ 1000 V

-

Through Hole

TO-220-2

-65°C ~ 175°C

SL44HE3_B-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

paquet: -

Stock216

40 V

8A

500 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 125°C

SF66G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 6A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock7 500

400 V

6A

1.3 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

JANS1N6677-1

Microchip Technology

DIODE SCHOTTKY 40V 200MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 630 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

40 V

200mA

700 mV @ 630 mA

Small Signal =< 200mA (Io), Any Speed

-

5 µA @ 40 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 150°C

BAS19-HE3_A-18

Vishay

SWITCHING DIODE GENPURP SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C

paquet: -

Request a Quote

100 V

200mA

1.25 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 100 V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

150°C

GSGP0230S

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, 2A, 30V, ES

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock17 001

30 V

2A

620 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 30 V

120pF @ 4V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323F

-55°C ~ 150°C