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Diodes - Redresseurs - Simples

Dossiers 52 788
Page  484/1 886
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JAN1N5804US
Microsemi Corporation

DIODE GEN PURP 100V 2.5A D5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: SQ-MELF, A
Stock4 432
100V
2.5A
975mV @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
SET121203
Semtech Corporation

DIODE GEN PURP 1KV 30A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2000ns
  • Current - Reverse Leakage @ Vr: 2µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Solder
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: Module
Stock2 816
1000V
30A
1.2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
2000ns
2µA @ 1000V
-
Solder
Module
-
-55°C ~ 150°C
RA203620XX
Powerex Inc.

DIODE MODULE 3.6KV 2000A PWRDISC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600V
  • Current - Average Rectified (Io): 2000A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 200mA @ 3600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: Pow-R-Disc
  • Operating Temperature - Junction: -
paquet: DO-200AD
Stock3 488
3600V
2000A
1.45V @ 3000A
Standard Recovery >500ns, > 200mA (Io)
25µs
200mA @ 3600V
-
Chassis Mount
DO-200AD
Pow-R-Disc
-
SCHF15000
Semtech Corporation

DIODE GP 15KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 15000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 20V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 1µA @ 15000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: Axial
Stock7 488
15000V
500mA
20V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
100ns
1µA @ 15000V
-
Through Hole
Axial
-
-55°C ~ 150°C
VS-12TQ035STRRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 15A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.75mA @ 35V
  • Capacitance @ Vr, F: 900pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 448
35V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.75mA @ 35V
900pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
NRVUB1620CTRT4G
ON Semiconductor

DIODE ULT FAST 200V 16A D2PAK-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK-3
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 344
200V
8A
1.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
5µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK-3
-65°C ~ 175°C
HS1KL RTG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-219AB
Stock3 456
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
CDBA1100-G
Comchip Technology

DIODE SCHOTTKY 100V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-214AC, SMA
Stock3 296
100V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 150°C
SS1FH10HM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1A DO-219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-219AB
Stock3 504
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 100V
70pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
CMSH1-150HE TR13
Central Semiconductor Corp

DIODE SCHOTTKY 150V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-214AC, SMA
Stock7 792
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
US2JDFQ-13
Diodes Incorporated

DIODE GEN PURP 600V 2A DFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: D-Flat
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: 2-SMD, Flat Lead
Stock5 024
600V
2A
1.7V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
D-Flat
-55°C ~ 150°C
CDBC360-G
Comchip Technology

DIODE SCHOTTKY 60V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: 125°C (Max)
paquet: DO-214AB, SMC
Stock22 308
60V
3A
700mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
125°C (Max)
P600D
Diotec Semiconductor

DIODE STD D8X7.5 200V 6A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 175°C
paquet: -
Stock6 156
200 V
6A
1.1 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
10 µA @ 200 V
-
Through Hole
P600, Axial
P600
-50°C ~ 175°C
NTE6037
NTE Electronics, Inc

DIODE GEN PURP 600V 85A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 125°C
paquet: -
Request a Quote
600 V
85A
1.75 V @ 267 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
100 µA @ 600 V
-
Stud Mount
DO-203AA, DO-5, Stud
DO-5
-40°C ~ 125°C
MGR1602-BP
Micro Commercial Co

DIODE GEN PURP 100V 16A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
100 V
16A
1.1 V @ 16 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SIC15120B-BP
Micro Commercial Co

Interface

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 1059pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
1200 V
15A
1.8 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 1200 V
1059pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
RHRD650S
Harris Corporation

DIODE GEN PURP 500V 6A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Request a Quote
500 V
6A
2.1 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 500 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-65°C ~ 175°C
SD840S_L2_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 8A TO252

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: -
Request a Quote
40 V
8A
550 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
-55°C ~ 125°C
BYS12-90HE3_A-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 90V 1.5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 90 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
90 V
1.5A
750 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 90 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
FFSH1065B-F085
onsemi

DIODE SIL CARB 650V 11.5A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 11.5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 421pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock5 352
650 V
11.5A
-
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
421pF @ 1V, 100kHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
MBRP30035L
Motorola

RECTIFIER, SCHOTTKY, 300A, 35V

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 300 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 35 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: POWERTAP II
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
35 V
300A
570 mV @ 300 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 mA @ 35 V
-
Chassis Mount
Module
POWERTAP II
-55°C ~ 150°C
JPAD200-TO-92-2L
Linear Integrated Systems, Inc.

DIODE GEN PURP 35V 10MA TO92

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io): 10mA
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 pA @ 20 V
  • Capacitance @ Vr, F: 1.5pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-226-2, TO-92-2 (TO-226AC)
  • Supplier Device Package: TO-92
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock3 132
35 V
10mA
1.5 V @ 5 mA
Small Signal =< 200mA (Io), Any Speed
-
200 pA @ 20 V
1.5pF @ 5V, 1MHz
Through Hole
TO-226-2, TO-92-2 (TO-226AC)
TO-92
-55°C ~ 150°C
MURB15120C-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
1200 V
15A
2.4 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
10 µA @ 1200 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
1N5819HW-7-G
Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 40 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: -
Request a Quote
40 V
1A
450 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 40 V
50pF @ 4V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 125°C
1N250
Microchip Technology

DIODE GEN PURP 200V 40A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 200°C
paquet: -
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200 V
40A
1.19 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 200°C
YQ3LAM10DTFTR
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 3A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 100 V
  • Capacitance @ Vr, F: 140pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 175°C
paquet: -
Stock10 500
100 V
3A
640 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
30 µA @ 100 V
140pF @ 4V, 1MHz
Surface Mount
SOD-128
PMDTM
175°C
VSSAF5M10-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 5A DO221AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 100 V
  • Capacitance @ Vr, F: 470pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -40°C ~ 175°C
paquet: -
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100 V
5A
790 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 100 V
470pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-40°C ~ 175°C
MSASC150H45LS-TR
Microchip Technology

DIODE POWER SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
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