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Diodes - Redresseurs - Simples

Dossiers 52 788
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BY229-200HE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 145ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-220-2
Stock2 080
200V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
145ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
IDD12SG60CXTMA2
Infineon Technologies

SIC DIODES

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Stock2 304
-
-
-
-
-
-
-
-
-
-
-
V30DM120HM3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO263AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.06V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -40°C ~ 175°C
paquet: TO-263-3, D2Pak (2 Leads + Tab) Variant
Stock4 320
120V
30A
1.06V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 120V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-40°C ~ 175°C
1N5418-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: SOD-64, Axial
Stock4 848
400V
3A
1.5V @ 9A
Standard Recovery >500ns, > 200mA (Io)
100ns
1µA @ 200V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
S3J-M3/57T
Vishay Semiconductor Diodes Division

DIODE GPP 3A 600V DO-214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AB, SMC
Stock3 552
600V
3A
1.15V @ 2.5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
VSSA3L6S-M3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2.5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 60V
  • Capacitance @ Vr, F: 395pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock4 416
60V
2.5A
580mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 60V
395pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS215L R3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-219AB
Stock2 896
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS25LHM2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-219AB
Stock7 232
50V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SR104 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-204AL, DO-41, Axial
Stock7 328
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
DSI30-16AS-TUB
IXYS

DIODE GEN PURP 1.6KV 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 1600V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 175°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 096
1600V
30A
1.29V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
40µA @ 1600V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-40°C ~ 175°C
hot STPS745FP
STMicroelectronics

DIODE SCHOTTKY 45V 7.5A TO220FP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: 175°C (Max)
paquet: TO-220-2 Full Pack
Stock17 664
45V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2 Full Pack
TO-220FPAC
175°C (Max)
hot MBR40250TG
ON Semiconductor

DIODE SCHOTTKY 250V 40A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 250V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: TO-220-3
Stock19 872
250V
40A
970mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 250V
500pF @ 5V, 1MHz
Through Hole
TO-220-3
TO-220AB
-65°C ~ 150°C
MUR105G
ON Semiconductor

DIODE GEN PURP 50V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-204AL, DO-41, Axial
Stock20 622
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
hot RS1G
Fairchild/ON Semiconductor

DIODE GEN PURP 400V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock3 638 616
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
hot MURA120T3G
ON Semiconductor

DIODE GEN PURP 200V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AC, SMA
Stock2 894 508
200V
2A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot MURS120T3G
ON Semiconductor

DIODE GEN PURP 200V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AA, SMB
Stock6 162 324
200V
2A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
FR202
SMC Diode Solutions

DIODE GEN PURP 100V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: -
Request a Quote
100 V
2A
1.2 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 100 V
30pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 125°C
1N3296
Solid State Inc.

DIODE GEN PURP 1.2KV 100A DO8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
paquet: -
Request a Quote
1200 V
100A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 1200 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
2CL73A
Diotec Semiconductor

HV DIODE D2.5X12 12000V 80NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 12000 V
  • Current - Average Rectified (Io): 5mA
  • Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 12000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 120°C
paquet: -
Request a Quote
12000 V
5mA
45 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
80 ns
2 µA @ 12000 V
-
Through Hole
Axial
Axial
-40°C ~ 120°C
HS2GFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock18 090
400 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
1 µA @ 400 V
25pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
PU2DMH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A MICRO SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: Micro SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock16 944
200 V
2A
1.05 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
36 ns
1 µA @ 200 V
18pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
Micro SMA
-55°C ~ 175°C
BAS16W-AU_R1_000A1
Panjit International Inc.

DIODE GEN PURP 75V 150MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock8 397
75 V
150mA
855 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
6 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 150°C
ST5045AX-D
SMC Diode Solutions

TRENCH SCHOTTKY DIODE 45V 50A R-

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SX34_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 3A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock30 849
40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
APT40DQ120SG
Microchip Technology

DIODE GEN PURP 1.2KV 40A D3PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 350 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock2 970
1200 V
40A
3.4 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
350 ns
100 µA @ 1200 V
-
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
-55°C ~ 175°C
1N4148-T50A
Fairchild Semiconductor

HIGH CONDUCTANCE FAST DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: 175°C (Max)
paquet: -
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100 V
200mA
1 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
175°C (Max)
1N3957-TR
Microchip Technology

DIODE GEN PURP 1KV 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 1 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
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1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 1 V
-
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
STTH1004FP
STMicroelectronics

DISCRETE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: 175°C
paquet: -
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400 V
10A
1.7 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
140 ns
1 µA @ 400 V
-
Through Hole
TO-220-2 Full Pack
TO-220FPAC
175°C