Page 1880 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
LL101C-7	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 30MA SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 30mA (DC) Voltage - Forward (Vf) (Max) @ If: 390mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max)	paquet: DO-213AC, MINI-MELF, SOD-80	Stock3 408	40V	30mA (DC)	390mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 30V	2.2pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	125°C (Max)
SPV1001D40	STMicroelectronics	DIODE GEN PURP 40V 16A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 16A (DC) Voltage - Forward (Vf) (Max) @ If: 230mV @ 16A Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -45°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6 160	40V	16A (DC)	230mV @ 16A	-	-	1µA @ 40V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-45°C ~ 175°C
SUF15G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-201AA, DO-27, Axial	Stock3 024	400V	1.5A	1.8V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-55°C ~ 150°C
SMBSR1010	Micro Commercial Co	DIODE SCHOTTKY 100V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMBJ) Operating Temperature - Junction: -55°C ~ 125°C	paquet: DO-214AA, SMB	Stock7 216	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMBJ)	-55°C ~ 125°C
B120-13	Diodes Incorporated	DIODE SCHOTTKY 20V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-214AC, SMA	Stock6 538 548	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
JAN1N1190R	Microsemi Corporation	DIODE GEN PURP 600V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AB, DO-5, Stud	Stock3 552	600V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
VS-8TQ100STRR-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 80V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3 280	100V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 80V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
NSB8MTHE3_A/P	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4 224	1000V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	55pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
V12P12HM3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 3.9A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock2 800	120V	3.9A	830mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
BYM12-50HE3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-213AB, MELF (Glass)	Stock6 096	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
S5B-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GPP 5A 100V DO-214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AB, SMC	Stock6 160	100V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
UF1006-M3/54	Vishay Semiconductor Diodes Division	DIODE 1A 800V 75NS DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 180°C	paquet: DO-204AL, DO-41, Axial	Stock4 624	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 180°C
UF1J A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock7 712	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS25LHMQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-219AB	Stock2 688	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
V35PWM10HM3/I	Vishay Semiconductor Diodes Division	RECT SCHKY 35A 100V SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 900mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 100V Capacitance @ Vr, F: 2500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7 024	100V	35A	900mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 100V	2500pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 175°C
RF071M2STR	Rohm Semiconductor	DIODE GEN PURP 200V 700MA PMDU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 850mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	paquet: SOD-123F	Stock1 048 488	200V	700mA	850mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
IDH08SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 600V Capacitance @ Vr, F: 240pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-220-2	Stock19 728	600V	8A (DC)	2.1V @ 8A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
MUR180-AP	Micro Commercial Co	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -50°C ~ 150°C	paquet: -	Request a Quote	800 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-50°C ~ 150°C
GATELEADMPWHPK1258XXPSA1	Infineon Technologies	STD THYR/DIODEN DISC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MMBD4148_R1_00001	Panjit International Inc.	DIODE GEN PURP 75V 150MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock106 122	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	2.5 µA @ 75 V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
NRVUS2KA	onsemi	DIODE GEN PURP 800V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock22 500	800 V	1.5A	1.7 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
V2NL63-M3-H	Vishay	2A, 60V, DFN3820A TRENCH SKY REC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: 360pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 150°C	paquet: -	Request a Quote	60 V	2A	580 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	360pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 150°C
UTR42	Microchip Technology	DIODE GEN PURP 400V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350 ns Current - Reverse Leakage @ Vr: 3 µA @ 400 V Capacitance @ Vr, F: 60pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	400 V	2A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	3 µA @ 400 V	60pF @ 0V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
SSL34	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Stock7 500	40 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
JAN1N5419US-TR	Microchip Technology	DIODE GEN PURP 500V 3A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 1 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 500 V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 175°C
RB521S-30FSTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RB168LAM-30TFTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600 nA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	paquet: -	Stock1 581	30 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	600 nA @ 30 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
S1KF_R1_00001	Panjit International Inc.	DIODE GEN PURP 800V 1A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	9pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C

LL101C-7

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 30MA SOD80

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 30mA (DC)
Voltage - Forward (Vf) (Max) @ If: 390mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)

paquet: DO-213AC, MINI-MELF, SOD-80

Stock3 408

40V

30mA (DC)

390mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

1ns

200nA @ 30V

2.2pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

125°C (Max)

SPV1001D40

STMicroelectronics

DIODE GEN PURP 40V 16A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 16A (DC)
Voltage - Forward (Vf) (Max) @ If: 230mV @ 16A
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -45°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6 160

40V

16A (DC)

230mV @ 16A

-

1µA @ 40V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-45°C ~ 175°C

SUF15G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-201AA, DO-27, Axial

Stock3 024

400V

1.5A

1.8V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 400V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-55°C ~ 150°C

SMBSR1010

Micro Commercial Co

DIODE SCHOTTKY 100V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -55°C ~ 125°C

paquet: DO-214AA, SMB

Stock7 216

100V

1A

800mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMBJ)

-55°C ~ 125°C

B120-13

Diodes Incorporated

DIODE SCHOTTKY 20V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AC, SMA

Stock6 538 548

20V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

110pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

JAN1N1190R

Microsemi Corporation

DIODE GEN PURP 600V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AB, DO-5, Stud

Stock3 552

600V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

VS-8TQ100STRR-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 80V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3 280

100V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 80V

500pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-55°C ~ 175°C

NSB8MTHE3_A/P

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4 224

1000V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

55pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

V12P12HM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock2 800

120V

3.9A

830mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

BYM12-50HE3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-213AB, MELF (Glass)

Stock6 096

50V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

S5B-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GPP 5A 100V DO-214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AB, SMC

Stock6 160

100V

5A

1.15V @ 5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 100V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

UF1006-M3/54

Vishay Semiconductor Diodes Division

DIODE 1A 800V 75NS DO-41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 180°C

paquet: DO-204AL, DO-41, Axial

Stock4 624

800V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 180°C

UF1J A0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock7 712

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 600V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SS25LHMQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-219AB

Stock2 688

50V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 50V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

V35PWM10HM3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 35A 100V SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 100V
Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7 024

100V

35A

900mV @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 100V

2500pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 175°C

RF071M2STR

Rohm Semiconductor

DIODE GEN PURP 200V 700MA PMDU

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 850mV @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

paquet: SOD-123F

Stock1 048 488

200V

700mA

850mV @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

IDH08SG60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 70µA @ 600V
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-2

Stock19 728

600V

8A (DC)

2.1V @ 8A

No Recovery Time > 500mA (Io)

0ns

70µA @ 600V

240pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

MUR180-AP

Micro Commercial Co

DIODE GEN PURP 800V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C

paquet: -

Request a Quote

800 V

1A

1.75 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 800 V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-50°C ~ 150°C

GATELEADMPWHPK1258XXPSA1

Infineon Technologies

STD THYR/DIODEN DISC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-

MMBD4148_R1_00001

Panjit International Inc.

DIODE GEN PURP 75V 150MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock106 122

75 V

150mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

2.5 µA @ 75 V

1.5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

NRVUS2KA

onsemi

DIODE GEN PURP 800V 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock22 500

800 V

1.5A

1.7 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 800 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

V2NL63-M3-H

Vishay

2A, 60V, DFN3820A TRENCH SKY REC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C

paquet: -

Request a Quote

60 V

2A

580 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 60 V

360pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 150°C

UTR42

Microchip Technology

DIODE GEN PURP 400V 2A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

400 V

2A

1.1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

350 ns

3 µA @ 400 V

60pF @ 0V, 1MHz

Through Hole

A, Axial

-65°C ~ 175°C

SSL34

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

paquet: -

Stock7 500

40 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 125°C

JAN1N5419US-TR

Microchip Technology

DIODE GEN PURP 500V 3A D-5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

500 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

1 µA @ 500 V

-

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 175°C

RB521S-30FSTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-

RB168LAM-30TFTR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

paquet: -

Stock1 581

30 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

600 nA @ 30 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

S1KF_R1_00001

Panjit International Inc.

DIODE GEN PURP 800V 1A SMBF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

800 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 800 V

9pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C