Diodes - Redresseurs - Simples

1N4006-N-0-1-BP

Micro Commercial Co

DIODE GEN PURP 800V 1A DO-41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

DSB0.5A30

Microsemi Corporation

DIODE SCHOTTKY 30V 500MA DO35

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 30V
• Capacitance @ Vr, F: 60pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 125°C

paquet: DO-204AH, DO-35, Axial

ESH2BHE3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214AA, SMB

BYD17K,135

NXP

DIODE AVALANCHE 800V 1.5A MELF

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 1µA @ 800V
• Capacitance @ Vr, F: 21pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-87
• Supplier Device Package: MELF
• Operating Temperature - Junction: -65°C ~ 175°C

paquet: SOD-87

MBRS130T3

ON Semiconductor

DIODE SCHOTTKY 30V 1A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 125°C

paquet: DO-214AA, SMB

301U100 G R G

Vishay Semiconductor Opto Division

DIODE GEN PURP 1KV 300A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 180°C

paquet: DO-205AB, DO-9, Stud

IDH04G65C6XKSA1

Infineon Technologies

SIC DIODES

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

paquet: -

R7S01016XX

Powerex Inc.

DIODE MODULE 1KV 1600A DO200AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1600A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 7µs
• Current - Reverse Leakage @ Vr: 50mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: DO-200AA, R62
• Operating Temperature - Junction: -

paquet: DO-200AA, A-PUK

1N5622US

Microsemi Corporation

DIODE GEN PURP 1KV 1A D5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 500nA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 200°C

paquet: SQ-MELF, A

VS-50PF160

Vishay Semiconductor Diodes Division

DIODE STD REC 1600V 50A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 125A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -55°C ~ 160°C

paquet: DO-203AB, DO-5, Stud

SF3003PT C0G

TSC America Inc.

DIODE, SUPER FAST, 30A, 150V, 35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Capacitance @ Vr, F: 175pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-247-3

VBT1045BP-M3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 45V TO-263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SR504 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 4

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

paquet: DO-201AD, Axial

EGP10G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

B230LA-M3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AC, SMA

ES2C M4G

TSC America Inc.

DIODE, SUPER FAST, 2A, 150V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

RS2KA M2G

TSC America Inc.

DIODE, FAST, 1.5A, 800V, 500NS,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

B150B-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 1A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Capacitance @ Vr, F: 110pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AA, SMB

SSA23L-E3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AC, SMA

ES1AWG_R1_00001

Panjit International Inc.

DIODE GEN PURP 50V 1A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA (DO-214AC)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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RS2DALH

Taiwan Semiconductor Corporation

150NS, 2A, 200V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 11pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

1SS400S7STE61

Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

paquet: -

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FR205GP-TP

Micro Commercial Co

DIODE GEN PURP 600V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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MURS160BJ

WeEn Semiconductors

DIODE GEN PURP 600V 1A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: 175°C (Max)

paquet: -

1N1437R

Solid State Inc.

DIODE GEN PURP REV 400V 40A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

paquet: -

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UF4004G

SMC Diode Solutions

DIODE GEN PURP 400V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

RB520S-40FHTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

paquet: -

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UG1DPLHE3-TP

Micro Commercial Co

RECTIFIERS

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 200 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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