Page 1702 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MA2SD290GL	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA SSMINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 120µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SSMini2-F4 Operating Temperature - Junction: 125°C (Max)	paquet: SC-79, SOD-523	Stock3 488	30V	100mA	420mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1ns	120µA @ 30V	-	Surface Mount	SC-79, SOD-523	SSMini2-F4	125°C (Max)
DSS1-60BA	IXYS	DIODE SCHOTTKY 60V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock6 128	60V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
BAS16WH6327XTSA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C (Max)	paquet: SC-70, SOT-323	Stock6 704	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C (Max)
1N4047R	Powerex Inc.	DIODE GEN PURP 200V 275A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 190°C	paquet: DO-205AB, DO-9, Stud	Stock7 136	200V	275A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 190°C
VS-T70HF20	Vishay Semiconductor Diodes Division	DIODE MODULE 200V 70A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	paquet: D-55 T-Module	Stock5 264	200V	70A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 200V	-	Chassis Mount	D-55 T-Module	D-55	-
SRA2050 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 20A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 700mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-220-2	Stock2 416	50V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VF30120SG-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 120V ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-220-3 Isolated Tab	Stock3 824	120V	30A	1.28V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Through Hole	TO-220-3 Isolated Tab	ITO-220AB	-40°C ~ 150°C
HER304G B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 300V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-201AD, Axial	Stock5 568	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SE20PDHM3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1.6A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-220AA	Stock7 184	200V	1.6A	1.05V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	5µA @ 200V	13pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
ES1C M2G	TSC America Inc.	DIODE, SUPER FAST, 1A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 16pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock7 200	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SBR2U100LP-7	Diodes Incorporated	DIODE SBR 100V 1.5A X1-DFN1411-3 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-UDFN Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C	paquet: 3-UDFN	Stock3 392	100V	1.5A	850mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	3-UDFN	X1-DFN1411-3	-55°C ~ 150°C
CDBA360-G	Comchip Technology	DIODE SCHOTTKY 60V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock4 192	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
STTH4R02BY-TR	STMicroelectronics	DIODE GEN PURP 200V 4A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 3µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock24 318	200V	4A	1.05V @ 4A	Standard Recovery >500ns, > 200mA (Io)	30ns	3µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
VS-4EWH02FNTR-M3	Vishay Semiconductor Diodes Division	DIODE FRED 4A 200V DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 3µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock82 980	200V	4A	950mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	3µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
PMEG3015EJ,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1.5A SOD323F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A (DC) Voltage - Forward (Vf) (Max) @ If: 550mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 72pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C (Max)	paquet: SC-90, SOD-323F	Stock81 504	30V	1.5A (DC)	550mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	72pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	150°C (Max)
CDBHD1100L-HF	Comchip Technology	DIODE SCHOTTKY 1A 100V TO-269AA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HS2DFSH	Taiwan Semiconductor Corporation	50NS, 2A, 200V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 32pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock42 000	200 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 200 V	32pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
JANTXV1N4148UR-1-TR	Microchip Technology	DIODE GEN PURP 75V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 25 nA @ 20 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	25 nA @ 20 V	4pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
UF27520070A1-T1	SMC Diode Solutions	DIODE GEN PURP 200V 90A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 90A Voltage - Forward (Vf) (Max) @ If: 1 V @ 90 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Current - Reverse Leakage @ Vr: 60 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: 150°C (Max)	paquet: -	Request a Quote	200 V	90A	1 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	60 µA @ 200 V	-	Surface Mount	Die	Die	150°C (Max)
JAN1N6910UTK2AS-TR	Microchip Technology	DIODE SCHOTTKY 15V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	15 V	25A	520 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 15 V	2000pF @ 5V, 1MHz	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
MUR140GP-TP	Micro Commercial Co	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	400 V	1A	1.35 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	5 µA @ 400 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SIDC08D120H8X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 175°C	paquet: -	Request a Quote	1200 V	150A	1.41 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1200 V	-	-	-	-	-40°C ~ 175°C
CDBMS140-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -50°C ~ 125°C	paquet: -	Stock7 602	40 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	60pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-50°C ~ 125°C
CURC303-HF	Comchip Technology	DIODE ULTRA FAST RECT 200V 3A DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: 150°C	paquet: -	Request a Quote	200 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	150°C
RS1JAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock17 550	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	7pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
NTE552	NTE Electronics, Inc	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	600 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
S50340TS	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SR805H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	50 V	8A	700 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

MA2SD290GL

Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SSMINI2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 120µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SSMini2-F4
Operating Temperature - Junction: 125°C (Max)

paquet: SC-79, SOD-523

Stock3 488

30V

100mA

420mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1ns

120µA @ 30V

-

Surface Mount

SC-79, SOD-523

SSMini2-F4

125°C (Max)

DSS1-60BA

IXYS

DIODE SCHOTTKY 60V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock6 128

60V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

BAS16WH6327XTSA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C (Max)

paquet: SC-70, SOT-323

Stock6 704

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

PG-SOT323-3

150°C (Max)

1N4047R

Powerex Inc.

DIODE GEN PURP 200V 275A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 190°C

paquet: DO-205AB, DO-9, Stud

Stock7 136

200V

275A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 200V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 190°C

VS-T70HF20

Vishay Semiconductor Diodes Division

DIODE MODULE 200V 70A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

paquet: D-55 T-Module

Stock5 264

200V

70A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 200V

-

Chassis Mount

D-55 T-Module

D-55

-

SRA2050 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-220-2

Stock2 416

50V

20A

700mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

VF30120SG-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 120V ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-220-3 Isolated Tab

Stock3 824

120V

30A

1.28V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Through Hole

TO-220-3 Isolated Tab

ITO-220AB

-40°C ~ 150°C

HER304G B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 300V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-201AD, Axial

Stock5 568

300V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SE20PDHM3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.6A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-220AA

Stock7 184

200V

1.6A

1.05V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

5µA @ 200V

13pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

ES1C M2G

TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 16pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock7 200

150V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 150V

16pF @ 1V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SBR2U100LP-7

Diodes Incorporated

DIODE SBR 100V 1.5A X1-DFN1411-3

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C

paquet: 3-UDFN

Stock3 392

100V

1.5A

850mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 100V

-

Surface Mount

3-UDFN

X1-DFN1411-3

-55°C ~ 150°C

CDBA360-G

Comchip Technology

DIODE SCHOTTKY 60V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock4 192

60V

3A

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

STTH4R02BY-TR

STMicroelectronics

DIODE GEN PURP 200V 4A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock24 318

200V

4A

1.05V @ 4A

Standard Recovery >500ns, > 200mA (Io)

30ns

3µA @ 200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-40°C ~ 175°C

VS-4EWH02FNTR-M3

Vishay Semiconductor Diodes Division

DIODE FRED 4A 200V DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock82 980

200V

4A

950mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

3µA @ 200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

PMEG3015EJ,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1.5A SOD323F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 72pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)

paquet: SC-90, SOD-323F

Stock81 504

30V

1.5A (DC)

550mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

72pF @ 1V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323F

150°C (Max)

CDBHD1100L-HF

Comchip Technology

DIODE SCHOTTKY 1A 100V TO-269AA

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-

HS2DFSH

Taiwan Semiconductor Corporation

50NS, 2A, 200V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock42 000

200 V

2A

1 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 200 V

32pF @ 4V, 1MHz

Surface Mount

SOD-128

-55°C ~ 150°C

JANTXV1N4148UR-1-TR

Microchip Technology

DIODE GEN PURP 75V 200MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

75 V

200mA

1.2 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

20 ns

25 nA @ 20 V

4pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 175°C

UF27520070A1-T1

SMC Diode Solutions

DIODE GEN PURP 200V 90A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 90 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: 150°C (Max)

paquet: -

Request a Quote

200 V

90A

1 V @ 90 A

Fast Recovery =< 500ns, > 200mA (Io)

70 ns

60 µA @ 200 V

-

Surface Mount

Die

150°C (Max)

JAN1N6910UTK2AS-TR

Microchip Technology

DIODE SCHOTTKY 15V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

15 V

25A

520 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 15 V

2000pF @ 5V, 1MHz

Surface Mount

ThinKey™2

-65°C ~ 150°C

MUR140GP-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

400 V

1A

1.35 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

5 µA @ 400 V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

SIDC08D120H8X1SA1

Infineon Technologies

DIODE GEN PURP 1.2KV 150A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 175°C

paquet: -

Request a Quote

1200 V

150A

1.41 V @ 45 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 1200 V

-

-40°C ~ 175°C

CDBMS140-HF

Comchip Technology

DIODE SCHOTTKY 40V 1A SOD123F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -50°C ~ 125°C

paquet: -

Stock7 602

40 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

60pF @ 4V, 1MHz

Surface Mount

SOD-123F

-50°C ~ 125°C

CURC303-HF

Comchip Technology

DIODE ULTRA FAST RECT 200V 3A DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: 150°C

paquet: -

Request a Quote

200 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

150°C

RS1JAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A THIN SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock17 550

600 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

1 µA @ 600 V

7pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

NTE552

NTE Electronics, Inc

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

600 V

1A

1.2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

5 µA @ 600 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

S50340TS

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-

SR805H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 8A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

50 V

8A

700 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C