Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 10A ITO220AC
|
paquet: TO-220-2 Full Pack, Isolated Tab |
Stock4 880 |
|
50V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A TO277A
|
paquet: TO-277, 3-PowerDFN |
Stock339 252 |
|
50V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
||
ON Semiconductor |
DIODE GP 1KV 25A MICRODE BUTTN
|
paquet: Microde Button |
Stock3 168 |
|
1000V | 25A | 1.18V @ 78.5A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1000V | - | Surface Mount | Microde Button | Microde Button | -65°C ~ 175°C |
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Infineon Technologies Industrial Power and Controls Americas |
DIODE RECITIFER 2800V 1900A
|
paquet: - |
Stock6 128 |
|
- | - | - | - | - | - | - | - | - | - | - |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 20A DO5
|
paquet: DO-203AB, DO-5, Stud |
Stock2 704 |
|
800V | 20A | 1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
||
IXYS |
DIODE AVALANCHE 1.2KV 2.3A
|
paquet: Radial |
Stock5 760 |
|
1200V | 2.3A | 1.34V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 700µA @ 1200V | - | Through Hole | Radial | - | -40°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 5A DO214AB
|
paquet: DO-214AB, SMC |
Stock3 152 |
|
100V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 35V 200MA DO35
|
paquet: DO-204AH, DO-35, Axial |
Stock780 000 |
|
35V | 200mA | 1V @ 30mA | Small Signal =< 200mA (Io), Any Speed | 2ns | 100nA @ 25V | 4pF @ 4V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A TO263AB
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4 416 |
|
600V | 5A | 1.75V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
||
STMicroelectronics |
DIODE SCHOTTKY 45V 10A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock38 400 |
|
45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 175°C (Max) |
||
STMicroelectronics |
DIODE SCHOTTKY 40V 1A STMITEFLAT
|
paquet: DO-222AA |
Stock270 000 |
|
40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35µA @ 40V | - | Surface Mount | DO-222AA | STmite Flat | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB
|
paquet: DO-213AB, MELF (Glass) |
Stock6 768 |
|
1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1.5A, 600
|
paquet: DO-204AC, DO-15, Axial |
Stock5 440 |
|
600V | 1.5A | 1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO220AA
|
paquet: DO-220AA |
Stock2 688 |
|
200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 200V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 0.2A,
|
paquet: 0201 (0603 Metric) |
Stock4 336 |
|
40V | 200mA | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 200nA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | 0201 (0603 Metric) | 0603 | -65°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL
|
paquet: DO-204AL, DO-41, Axial |
Stock6 704 |
|
50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.5A, 600V, 250NS,
|
paquet: DO-219AB |
Stock6 288 |
|
600V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A D2PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 080 |
|
200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA
|
paquet: SC-76, SOD-323 |
Stock2 432 |
|
30V | 200mA | 280mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 17pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
||
Bourns Inc. |
DIODE SCHOTTKY 100V 2A 1206
|
paquet: Chip, Concave Terminals |
Stock53 256 |
|
100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | Chip, Concave Terminals | 1206 | -55°C ~ 125°C |
||
ON Semiconductor |
DIODE GEN PURP 100V 200MA SOD323
|
paquet: SC-76, SOD-323 |
Stock41 220 |
|
100V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
||
Solid State Inc. |
DIODE GEN PURP REV 250V 40A DO5
|
paquet: - |
Request a Quote |
|
250 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 250 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Microchip Technology |
DIODE GEN PURP 50V 150MA DO213AA
|
paquet: - |
Request a Quote |
|
50 V | 150mA | 880 mV @ 20 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 50 nA @ 50 V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
2A, 200V, STANDARD RECOVERY RECT
|
paquet: - |
Stock28 500 |
|
200 V | 2A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 150°C |
||
Renesas Electronics Corporation |
RECTIFIER DIODE, SCHOTTKY
|
paquet: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
DIODE GEN PURP 1.2KV 12A TO263HV
|
paquet: - |
Stock2 400 |
|
1200 V | 12A | 2.62 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 100 µA @ 1200 V | 5pF @ 600V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
||
onsemi |
DIODE SCHOTTKY 35V 8A DPAK
|
paquet: - |
Request a Quote |
|
35 V | 8A | 510 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4 mA @ 35 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
||
Central Semiconductor Corp |
DIODE GEN PURP 200V 3A DO201AD
|
paquet: - |
Request a Quote |
|
200 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |