Page 167 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRB7H35-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY TO-263AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock4 624	-	-	-	-	-	-	-	-	-	-	-
S1KHE3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock90 000	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
R7204006XXOO	Powerex Inc.	DIODE MODULE 4KV 600A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000V Current - Average Rectified (Io): 600A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 50mA @ 4000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	paquet: DO-200AA, A-PUK	Stock6 160	4000V	600A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	7µs	50mA @ 4000V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
R7201806XXOO	Powerex Inc.	DIODE MODULE 1.8KV 600A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 600A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 50mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	paquet: DO-200AB, B-PUK	Stock2 144	1800V	600A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	7µs	50mA @ 1800V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
R6201230XXOO	Powerex Inc.	DIODE MODULE 1.2KV 300A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 6µs Current - Reverse Leakage @ Vr: 50mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	paquet: DO-200AA, A-PUK	Stock4 704	1200V	300A	1.7V @ 800A	Standard Recovery >500ns, > 200mA (Io)	6µs	50mA @ 1200V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
VS-80EBU02HF4	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 80A POWERTAB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: PowerTab? Supplier Device Package: PowerTab? Operating Temperature - Junction: -55°C ~ 175°C	paquet: PowerTab?	Stock2 112	200V	80A	1.1V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	50µA @ 200V	-	Through Hole	PowerTab?	PowerTab?	-55°C ~ 175°C
VT2080S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 80V 20A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-220-3	Stock3 360	80V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 80V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
V10P20-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 200V 2.4A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock5 856	200V	2.4A	1.34V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 200V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
SBRT4U60LP-7	Diodes Incorporated	DIODE SBR 60V 4A U-DFN3030-8 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 520mV @ 4A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 180pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8 Operating Temperature - Junction: -55°C ~ 175°C	paquet: 8-PowerUDFN	Stock2 688	60V	4A	520mV @ 4A	Standard Recovery >500ns, > 200mA (Io)	-	150µA @ 60V	180pF @ 5V, 1MHz	Surface Mount	8-PowerUDFN	U-DFN3030-8	-55°C ~ 175°C
EGP10G-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock6 592	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
SE30AFJHM3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.4A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-221AC, SMA Flat Leads	Stock7 104	600V	1.4A (DC)	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	100µA @ 100V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC	-55°C ~ 175°C
SS115LHR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-219AB	Stock2 352	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHMQG	TSC America Inc.	DIODE, SUPER FAST, 1A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-219AB	Stock2 880	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
PMEG4010EGWJ	Nexperia USA Inc.	PMEG3020EGW/SOD123/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 640mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 43pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	paquet: SOD-123	Stock6 224	40V	-	640mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	43pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-
RF05VAM1STR	Rohm Semiconductor	DIODE SUP FAST 100V 500MA TUMD2M Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 980mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	paquet: 2-SMD, Flat Lead	Stock6 608	100V	500mA	980mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 100V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
STPS1045FP	STMicroelectronics	DIODE SCHOTTKY 45V 10A TO220FPAC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FPAC Operating Temperature - Junction: 175°C (Max)	paquet: TO-220-2 Full Pack	Stock17 772	45V	10A	600mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2 Full Pack	TO-220FPAC	175°C (Max)
ER3E_R1_00001	Panjit International Inc.	DIODE GEN PURP 300V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 300 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock2 325	300 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
JANTX1N3174	Microchip Technology	DIODE GEN PURP 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	paquet: -	Request a Quote	-	300A	1.55 V @ 940 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1000 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
BAT54Q-7-F	Diodes Incorporated	DIODE SCHOTT 30V 200MA SOT23 3K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Stock36 000	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
VSSAF3M63HM3-I	Vishay	3A, 60V SLIMSMA TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2.6A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 60 V Capacitance @ Vr, F: 575pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 175°C	paquet: -	Request a Quote	60 V	2.6A	620 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 60 V	575pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 175°C
SICRD5650	SMC Diode Solutions	DIODE SIL CARBIDE 650V 5A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
SK84C	MDD	DIODE SCHOTTKY 40V 8A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 900pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	40 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	900pF @ 4V, 1MHz	Surface Mount	-	-	-
1N1672R	Solid State Inc.	DIODE GEN PURP REV 150V 275A DO9 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -65°C ~ 190°C	paquet: -	Request a Quote	150 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 150 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 190°C
SS24H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Stock24 000	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
1N5391BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 50V 1.5A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	50 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
JANTX1N6843U3	Microchip Technology	DIODE SCHOTTKY 100V 10A U3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 (SMD-0.5) Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	100 V	10A	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Surface Mount	3-SMD, No Lead	U3 (SMD-0.5)	-65°C ~ 150°C
UES703R	Microchip Technology	DIODE GEN PURP 150V 25A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 20 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote	150 V	25A	950 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 150 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-55°C ~ 175°C
UFT3120	Microchip Technology	DIODE GEN PURP 200V 30A TO204AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 15 µA @ 200 V Capacitance @ Vr, F: 115pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	200 V	30A	1.1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	15 µA @ 200 V	115pF @ 10V, 1MHz	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)	-65°C ~ 175°C

MBRB7H35-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-263AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock4 624

-

S1KHE3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock90 000

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 800V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

R7204006XXOO

Powerex Inc.

DIODE MODULE 4KV 600A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000V
Current - Average Rectified (Io): 600A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 50mA @ 4000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

paquet: DO-200AA, A-PUK

Stock6 160

4000V

600A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

7µs

50mA @ 4000V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

R7201806XXOO

Powerex Inc.

DIODE MODULE 1.8KV 600A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 600A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 50mA @ 1800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

paquet: DO-200AB, B-PUK

Stock2 144

1800V

600A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

7µs

50mA @ 1800V

-

Chassis Mount

DO-200AB, B-PUK

-

R6201230XXOO

Powerex Inc.

DIODE MODULE 1.2KV 300A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6µs
Current - Reverse Leakage @ Vr: 50mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

paquet: DO-200AA, A-PUK

Stock4 704

1200V

300A

1.7V @ 800A

Standard Recovery >500ns, > 200mA (Io)

6µs

50mA @ 1200V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

VS-80EBU02HF4

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 80A POWERTAB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: PowerTab?
Supplier Device Package: PowerTab?
Operating Temperature - Junction: -55°C ~ 175°C

paquet: PowerTab?

Stock2 112

200V

80A

1.1V @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

50µA @ 200V

-

Through Hole

PowerTab?

-55°C ~ 175°C

VT2080S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 20A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-220-3

Stock3 360

80V

20A

920mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

700µA @ 80V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

V10P20-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 2.4A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2.4A
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock5 856

200V

2.4A

1.34V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 200V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

SBRT4U60LP-7

Diodes Incorporated

DIODE SBR 60V 4A U-DFN3030-8

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 4A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -55°C ~ 175°C

paquet: 8-PowerUDFN

Stock2 688

60V

4A

520mV @ 4A

Standard Recovery >500ns, > 200mA (Io)

-

150µA @ 60V

180pF @ 5V, 1MHz

Surface Mount

8-PowerUDFN

U-DFN3030-8

-55°C ~ 175°C

EGP10G-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock6 592

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

SE30AFJHM3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.4A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-221AC, SMA Flat Leads

Stock7 104

600V

1.4A (DC)

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

100µA @ 100V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC

-55°C ~ 175°C

SS115LHR3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-219AB

Stock2 352

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

ES1FLHMQG

TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-219AB

Stock2 880

300V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

8pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

PMEG4010EGWJ

Nexperia USA Inc.

PMEG3020EGW/SOD123/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 640mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -

paquet: SOD-123

Stock6 224

40V

-

640mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

43pF @ 1V, 1MHz

Surface Mount

SOD-123

-

RF05VAM1STR

Rohm Semiconductor

DIODE SUP FAST 100V 500MA TUMD2M

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 980mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

paquet: 2-SMD, Flat Lead

Stock6 608

100V

500mA

980mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 100V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

STPS1045FP

STMicroelectronics

DIODE SCHOTTKY 45V 10A TO220FPAC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)

paquet: TO-220-2 Full Pack

Stock17 772

45V

10A

600mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Through Hole

TO-220-2 Full Pack

TO-220FPAC

175°C (Max)

ER3E_R1_00001

Panjit International Inc.

DIODE GEN PURP 300V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock2 325

300 V

3A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 300 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

JANTX1N3174

Microchip Technology

DIODE GEN PURP 300A DO205AB DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C

paquet: -

Request a Quote

-

300A

1.55 V @ 940 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 1000 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 200°C

BAT54Q-7-F

Diodes Incorporated

DIODE SCHOTT 30V 200MA SOT23 3K

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Stock36 000

30 V

200mA

800 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-65°C ~ 150°C

VSSAF3M63HM3-I

Vishay

3A, 60V SLIMSMA TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2.6A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 60 V
Capacitance @ Vr, F: 575pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C

paquet: -

Request a Quote

60 V

2.6A

620 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 µA @ 60 V

575pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 175°C

SICRD5650

SMC Diode Solutions

DIODE SIL CARBIDE 650V 5A DPAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Request a Quote

650 V

5A

1.7 V @ 5 A

No Recovery Time > 500mA (Io)

0 ns

60 µA @ 650 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-55°C ~ 175°C

SK84C

MDD

DIODE SCHOTTKY 40V 8A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 900pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

40 V

8A

550 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

900pF @ 4V, 1MHz

Surface Mount

-

1N1672R

Solid State Inc.

DIODE GEN PURP REV 150V 275A DO9

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-9
Operating Temperature - Junction: -65°C ~ 190°C

paquet: -

Request a Quote

150 V

275A

1.3 V @ 300 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 150 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-9

-65°C ~ 190°C

SS24H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

paquet: -

Stock24 000

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

1N5391BULK

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 50V 1.5A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

50 V

1.5A

1.1 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 50 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

JANTX1N6843U3

Microchip Technology

DIODE SCHOTTKY 100V 10A U3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3 (SMD-0.5)
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

100 V

10A

1.2 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 100 V

-

Surface Mount

3-SMD, No Lead

U3 (SMD-0.5)

-65°C ~ 150°C

UES703R

Microchip Technology

DIODE GEN PURP 150V 25A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Request a Quote

150 V

25A

950 mV @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

20 µA @ 150 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-55°C ~ 175°C

UFT3120

Microchip Technology

DIODE GEN PURP 200V 30A TO204AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

200 V

30A

1.1 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

15 µA @ 200 V

115pF @ 10V, 1MHz

Through Hole

TO-204AA, TO-3

TO-204AA (TO-3)

-65°C ~ 175°C