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Diodes - Redresseurs - Simples

Dossiers 52 788
Page  1 622/1 886
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC19D60SIC3
Infineon Technologies

DIODE SCHOTTKY 600V 6A WAFER

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: Die
Stock5 600
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
hot 1N5822-T
Diodes Incorporated

DIODE SCHOTTKY 40V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-201AD, Axial
Stock168 360
40V
3A
525mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
VS-150U80D
Vishay Semiconductor Diodes Division

DIODE GP 800V 150A DO-8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
paquet: DO-205AA, DO-8, Stud
Stock5 376
800V
150A
1.47V @ 600A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 180°C
VS-50PF80W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 50A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 125A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -55°C ~ 180°C
paquet: DO-203AB, DO-5, Stud
Stock6 224
800V
50A
1.4V @ 125A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-55°C ~ 180°C
DPG10IM300UC
IXYS

DIODE GEN PURP 300V 10A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock6 816
300V
10A
1.27V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 300V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
-55°C ~ 175°C
ES3DB M4G
TSC America Inc.

DIODE, SUPER FAST, 3A, 200V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 46pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AA, SMB
Stock3 744
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
46pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
NRVTSM260ET1G
ON Semiconductor

DIODE SCHOTTKY 60V 2A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-216AA
Stock5 456
60V
2A
650mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
12µA @ 60V
-
Surface Mount
DO-216AA
Powermite
-55°C ~ 175°C
STPSC8H065G-TR
STMicroelectronics

DIODE SCHOTTKY 650V 8A D2PAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 80µA @ 650V
  • Capacitance @ Vr, F: 414pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 736
650V
8A
1.75V @ 8A
No Recovery Time > 500mA (Io)
0ns
80µA @ 650V
414pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
SBR2U60S1F-7
Diodes Incorporated

DIODE SBR 60V 2A SOD123F

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Capacitance @ Vr, F: 75pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: SOD-123F
Stock7 408
60V
2A
510mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
150µA @ 60V
75pF @ 10V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 175°C
hot STTH8R06DIRG
STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Insulated, TO-220AC
  • Supplier Device Package: TO-220AC ins
  • Operating Temperature - Junction: 175°C (Max)
paquet: TO-220-2 Insulated, TO-220AC
Stock15 144
600V
8A
2.9V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
175°C (Max)
hot SDM10U45-7
Diodes Incorporated

DIODE SCHOTTKY 40V 100MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 25V
  • Capacitance @ Vr, F: 15pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -40°C ~ 125°C
paquet: SC-79, SOD-523
Stock11 432 844
40V
100mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 25V
15pF @ 10V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-40°C ~ 125°C
hot B340A-13-F
Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock9 560 760
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
PCFF20S65W
onsemi

DIODE SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MBR15U45HE3-TP
Micro Commercial Co

DIODE SCHOTTKY 45V 15A TO277

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock21 480
45 V
15A
750 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 45 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277
-55°C ~ 150°C
HERAF1004GH
Taiwan Semiconductor Corporation

50NS, 10A, 300V, HIGH EFFICIENT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 300 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock2 970
300 V
10A
1 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 300 V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
1N5408-A
Diodes Incorporated

MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
Request a Quote
1000 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1 kV
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
AS1FJHM3-I
Vishay General Semiconductor - Diodes Division

DIODE AVAL 600V 1.5A DO219AB

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
600 V
1.5A
1.15 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
1.3 µs
5 µA @ 600 V
8.8pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
ESDLW-RVG
Taiwan Semiconductor Corporation

DIODE GP 200V 800MA SOD123W

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 21pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
200 V
800mA
950 mV @ 800 mA
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 200 V
21pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 150°C
SDURK10Q70
SMC Diode Solutions

700V, 10A, ITO-220AC-2L, ULTRA F

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Stock24 000
-
-
-
-
-
-
-
-
-
-
-
UG2JAH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock45 000
600 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
2 µA @ 600 V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
PMEG100T10ELRX
Nexperia USA Inc.

DIODE SCHOTTKY 100V 1A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 11.5 ns
  • Current - Reverse Leakage @ Vr: 900 nA @ 100 V
  • Capacitance @ Vr, F: 125pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: 175°C
paquet: -
Stock34 017
100 V
1A
750 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
11.5 ns
900 nA @ 100 V
125pF @ 1V, 1MHz
Surface Mount
SOD-123W
SOD-123W
175°C
WNSC5D06650T6J
WeEn Semiconductors

DIODE SIL CARBIDE 650V 6A 5DFN

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Capacitance @ Vr, F: 201pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 5-DFN (8x8)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
650 V
6A
1.7 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
30 µA @ 650 V
201pF @ 1V, 1MHz
Surface Mount
4-VSFN Exposed Pad
5-DFN (8x8)
-55°C ~ 175°C
RURP820
Harris Corporation

DIODE AVALANCHE 200V 8A TO220AC

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Request a Quote
200 V
8A
975 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
100 µA @ 200 V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
RB520HS-30T15R
Rohm Semiconductor

DIODE SCHOTTKY 30V SMD0603B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 430 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 nA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: DSN0603-2, SOD-962, SMD0603
  • Operating Temperature - Junction: 150°C
paquet: -
Stock68 775
30 V
200mA
430 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
300 nA @ 10 V
-
Surface Mount
0201 (0603 Metric)
DSN0603-2, SOD-962, SMD0603
150°C
JAN1N6942UTK3AS
Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 45 V
  • Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™3
  • Supplier Device Package: ThinKey™3
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Request a Quote
45 V
150A
460 mV @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 45 V
7000pF @ 5V, 1MHz
Surface Mount
ThinKey™3
ThinKey™3
-65°C ~ 175°C
BAV19WS
SMC Diode Solutions

DIODE GEN PURP 100V 200MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 100 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
Stock323 349
100 V
200mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 100 V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-65°C ~ 150°C
GP10-4007-E3-73
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
paquet: -
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1000 V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
SR515H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
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150 V
5A
1.05 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C