Page 1598 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
LL4448-7	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	paquet: DO-213AC, MINI-MELF, SOD-80	Stock1 920 000	75V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	8ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
PMEG2005AEA/DG,115	Nexperia USA Inc.	DIODE SCHOTTKY 20V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 80pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 140°C (Max)	paquet: SC-76, SOD-323	Stock5 056	20V	500mA (DC)	390mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	80pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	140°C (Max)
US1GHE3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock2 096	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
8ETL06FP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-220-2 Full Pack	Stock14 064	600V	8A	1.05V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full Pack	-65°C ~ 175°C
SFAF1007G C0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 500V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-220-2 Full Pack	Stock3 840	500V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
VI10150S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 150V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6 704	150V	10A	1.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 150V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
SF5408-TAP	Vishay Semiconductor Diodes Division	DIODE AVAL 3A 1000V SOD-64 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock215 016	1000V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
BYW75TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 500V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock3 984	500V	3A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 500V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
VS-30WQ06FNTRRHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 60V Capacitance @ Vr, F: 145pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 960	60V	3.5A	610mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 60V	145pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
ESH2D-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-214AA, SMB	Stock7 776	200V	2A	930mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SS24L RFG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-219AB	Stock4 944	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
MUR160S M4G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 150µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-214AA, SMB	Stock3 664	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	150µA @ 600V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
ES1ALHRTG	TSC America Inc.	DIODE, SUPER FAST, 1A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-219AB	Stock3 904	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
DFLS1100-7	Diodes Incorporated	DIODE SCHOTTKY 100V POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 36pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -55°C ~ 175°C	paquet: POWERDI?123	Stock3 268 008	100V	1A	770mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	36pF @ 5V, 1MHz	Surface Mount	POWERDI?123	PowerDI? 123	-55°C ~ 175°C
SMD2150PL-TP	Micro Commercial Co	DIODE SCHOTTKY 150V 2A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 150V Capacitance @ Vr, F: 210pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C	paquet: SOD-123F	Stock6 400	150V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 150V	210pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 150°C
CMPD914E TR	Central Semiconductor Corp	DIODE GEN PURP 75V 250MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 970mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-236-3, SC-59, SOT-23-3	Stock110 466	75V	250mA	970mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100µA @ 150V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
1N5819-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	paquet: DO-204AL, DO-41, Axial	Stock4 864	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	10ns	1mA @ 40V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
S1ATR	SMC Diode Solutions	DIODE GEN PURP 50V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-214AC, SMA	Stock220 836	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
MUR805-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	50 V	8A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
D1600U45X122XPSA1	Infineon Technologies	DIODE GP 4.5KV 1560A D12026K-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 1560A Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: BG-D12026K-1 Operating Temperature - Junction: 140°C (Max)	paquet: -	Request a Quote	4500 V	1560A	4.3 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 4500 V	-	Chassis Mount	DO-200AE	BG-D12026K-1	140°C (Max)
SM4003PLHE3-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	1 µA @ 200 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
JANTXV1N6631-TR	Microchip Technology	DIODE GEN PURP 1.1KV 1.4A E-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100 V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 4 µA @ 1100 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: E-PAK Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	1100 V	1.4A	1.6 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	4 µA @ 1100 V	40pF @ 10V, 1MHz	Through Hole	E, Axial	E-PAK	-65°C ~ 150°C
JANTXV1N3070-1	Microchip Technology	DIODE GEN PURP 175V 100MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 175 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 175 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	5pF @ 0V, 1MHz	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 150°C
SFT12GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	100 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ACFRA104-HF	Comchip Technology	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
JANTX1N5802URS-TR	Microchip Technology	UFR,FRR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 50 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	50 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 50 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
SDS065J006C3-ISATH	Luminus Devices Inc.	DIODE 650V-6A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: 310pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote	650 V	20A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	310pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C
FR2504-BP	Micro Commercial Co	DIODE GEN PURP 400V 25A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -50°C ~ 150°C	paquet: -	Request a Quote	400 V	25A	1.3 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	10 µA @ 400 V	-	Through Hole	TO-220-2	TO-220AC	-50°C ~ 150°C

LL4448-7

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

paquet: DO-213AC, MINI-MELF, SOD-80

Stock1 920 000

75V

150mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

8ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

PMEG2005AEA/DG,115

Nexperia USA Inc.

DIODE SCHOTTKY 20V 500MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 140°C (Max)

paquet: SC-76, SOD-323

Stock5 056

20V

500mA (DC)

390mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

80pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

140°C (Max)

US1GHE3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock2 096

400V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

8ETL06FP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-220-2 Full Pack

Stock14 064

600V

8A

1.05V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

-

Through Hole

TO-220-2 Full Pack

-65°C ~ 175°C

SFAF1007G C0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 500V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-220-2 Full Pack

Stock3 840

500V

10A

1.7V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 500V

140pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

VI10150S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 150V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6 704

150V

10A

1.2V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 150V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 150°C

SF5408-TAP

Vishay Semiconductor Diodes Division

DIODE AVAL 3A 1000V SOD-64

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock215 016

1000V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1000V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

BYW75TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 500V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock3 984

500V

3A

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 500V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

VS-30WQ06FNTRRHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: 145pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 960

60V

3.5A

610mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 60V

145pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

ESH2D-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214AA, SMB

Stock7 776

200V

2A

930mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 200V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

SS24L RFG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-219AB

Stock4 944

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

MUR160S M4G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 150µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214AA, SMB

Stock3 664

600V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

150µA @ 600V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

ES1ALHRTG

TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-219AB

Stock3 904

50V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

DFLS1100-7

Diodes Incorporated

DIODE SCHOTTKY 100V POWERDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 36pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -55°C ~ 175°C

paquet: POWERDI?123

Stock3 268 008

100V

1A

770mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 100V

36pF @ 5V, 1MHz

Surface Mount

POWERDI?123

PowerDI? 123

-55°C ~ 175°C

SMD2150PL-TP

Micro Commercial Co

DIODE SCHOTTKY 150V 2A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 150V
Capacitance @ Vr, F: 210pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SOD-123F

Stock6 400

150V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 150V

210pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 150°C

CMPD914E TR

Central Semiconductor Corp

DIODE GEN PURP 75V 250MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 970mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-236-3, SC-59, SOT-23-3

Stock110 466

75V

250mA

970mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100µA @ 150V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-65°C ~ 150°C

1N5819-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

paquet: DO-204AL, DO-41, Axial

Stock4 864

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

10ns

1mA @ 40V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 125°C

S1ATR

SMC Diode Solutions

DIODE GEN PURP 50V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-214AC, SMA

Stock220 836

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 50V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-65°C ~ 175°C

MUR805-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

50 V

8A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

D1600U45X122XPSA1

Infineon Technologies

DIODE GP 4.5KV 1560A D12026K-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 1560A
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: BG-D12026K-1
Operating Temperature - Junction: 140°C (Max)

paquet: -

Request a Quote

4500 V

1560A

4.3 V @ 2500 A

Standard Recovery >500ns, > 200mA (Io)

-

150 mA @ 4500 V

-

Chassis Mount

DO-200AE

BG-D12026K-1

140°C (Max)

SM4003PLHE3-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

200 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

3 µs

1 µA @ 200 V

10pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

JANTXV1N6631-TR

Microchip Technology

DIODE GEN PURP 1.1KV 1.4A E-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100 V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 4 µA @ 1100 V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E-PAK
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

1100 V

1.4A

1.6 V @ 1.4 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

4 µA @ 1100 V

40pF @ 10V, 1MHz

Through Hole

E, Axial

E-PAK

-65°C ~ 150°C

JANTXV1N3070-1

Microchip Technology

DIODE GEN PURP 175V 100MA DO7

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 175 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

175 V

100mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 175 V

5pF @ 0V, 1MHz

Through Hole

DO-204AA, DO-7, Axial

DO-7

-65°C ~ 150°C

SFT12GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

100 V

1A

950 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 100 V

20pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

ACFRA104-HF

Comchip Technology

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

JANTX1N5802URS-TR

Microchip Technology

UFR,FRR

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

50 V

1A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 50 V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

SDS065J006C3-ISATH

Luminus Devices Inc.

DIODE 650V-6A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Request a Quote

650 V

20A

1.5 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 650 V

310pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220-2L

-55°C ~ 175°C

FR2504-BP

Micro Commercial Co

DIODE GEN PURP 400V 25A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -50°C ~ 150°C

paquet: -

Request a Quote

400 V

25A

1.3 V @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

10 µA @ 400 V

-

Through Hole

TO-220-2

TO-220AC

-50°C ~ 150°C