Page 120 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4003 BK	Central Semiconductor Corp	DIODE GEN PURPOSE DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-204AL, DO-41, Axial	Stock3 088	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
VS-STT250M16MPBF	Vishay Semiconductor Diodes Division	MODULE DIODE MAP COMPRESSED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock5 488	-	-	-	-	-	-	-	-	-	-	-
1N4002GP-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock4 784	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
D6020L53	Littelfuse Inc.	DIODE GEN PURP 600V 12.7A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12.7A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 12.7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab, Formed Leads Supplier Device Package: TO-220 Isolated Tab Operating Temperature - Junction: -40°C ~ 125°C	paquet: TO-220-3 Isolated Tab, Formed Leads	Stock4 736	600V	12.7A	1.6V @ 12.7A	Standard Recovery >500ns, > 200mA (Io)	4µs	10µA @ 600V	-	Through Hole	TO-220-3 Isolated Tab, Formed Leads	TO-220 Isolated Tab	-40°C ~ 125°C
A330M	Powerex Inc.	DIODE GEN PURP 600V 1200A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1200A Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 200°C	paquet: DO-200AA, A-PUK	Stock3 344	600V	1200A	-	-	-	-	-	Chassis Mount	DO-200AA, A-PUK	-	-40°C ~ 200°C
R7S00612XX	Powerex Inc.	DIODE MODULE 600V 1200A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1200A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 10µs Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	paquet: DO-200AA, A-PUK	Stock3 680	600V	1200A	1.6V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	10µs	50mA @ 600V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
VS-16FL20S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 16A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-203AA, DO-4, Stud	Stock2 496	200V	16A	1.4V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	50µA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
UG12HTHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 30µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	paquet: TO-220-2	Stock3 280	500V	12A	1.75V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	30µA @ 500V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
1N5417TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock5 504	200V	3A	1.5V @ 9A	Standard Recovery >500ns, > 200mA (Io)	100ns	1µA @ 200V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
ES2GAHR3G	TSC America Inc.	DIODE, SUPER FAST, 2A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock3 200	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
PR1503-T	Diodes Incorporated	DIODE GEN PURP 200V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-204AC, DO-15, Axial	Stock5 872	200V	1.5A	1.2V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
S1GLHRTG	TSC America Inc.	DIODE, 1A, 400V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-219AB	Stock5 968	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
FR107G R0G	TSC America Inc.	DIODE, FAST, 1A, 1000V, 500NS, D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock4 256	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SDM02M30LP3-7B	Diodes Incorporated	DIODE SCHOTTKY 30V 100MA 2-XFDFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 400nA @ 30V Capacitance @ Vr, F: 2.7pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: 2-X3-DFN0603 Operating Temperature - Junction: -55°C ~ 150°C	paquet: 2-XFDFN	Stock5 680	30V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	1.6ns	400nA @ 30V	2.7pF @ 5V, 1MHz	Surface Mount	2-XFDFN	2-X3-DFN0603	-55°C ~ 150°C
RRE07VSM6STR	Rohm Semiconductor	DIODE GP 600V 700MA TUMD2SM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max)	paquet: 2-SMD, Flat Lead	Stock3 200	600V	700mA	1.1V @ 700mA	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	-	Surface Mount	2-SMD, Flat Lead	TUMD2SM	150°C (Max)
V30120SG-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 30A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-220-3	Stock7 440	120V	30A	1.28V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Through Hole	TO-220-3	TO-220AB	-40°C ~ 150°C
MBR745	Fairchild/ON Semiconductor	DIODE SCHOTTKY 45V 7.5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-220-2	Stock2 143 776	45V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2	TO-220-2L	-65°C ~ 150°C
SBRT3M40P1-7	Diodes Incorporated	DIODE SBR 40V 3A POWERDI123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 150°C	paquet: POWERDI?123	Stock38 400	40V	3A	530mV @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	30µA @ 40V	-	Surface Mount	POWERDI?123	PowerDI? 123	-65°C ~ 150°C
FFH60UP60S3	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-247-3	Stock16 302	600V	60A	1.7V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	100µA @ 600V	-	Through Hole	TO-247-3	TO-247	-65°C ~ 150°C
MMBD4448-7-F	Diodes Incorporated	DIODE GEN PURP 75V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-236-3, SC-59, SOT-23-3	Stock36 000	75V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
RS07K-HM3-18	Vishay General Semiconductor - Diodes Division	DIODE GP 800V 500MA DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 2 µA @ 800 V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	800 V	500mA	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	2 µA @ 800 V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
BYV95-3-EBT1124TAP	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 850V SOD57 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MBRS1045	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote	45 V	10A	840 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
GP10-4005E-E3-54	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	paquet: -	Request a Quote	600 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
1N1585R	Solid State Inc.	DIODE GEN PURP REV 400V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	paquet: -	Request a Quote	400 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
SD101CW	Taiwan Semiconductor Corporation	SOD-123, 40V, 0.015A, SCHOTTKY D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 15mA Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1 ns Current - Reverse Leakage @ Vr: 200 nA @ 40 V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	paquet: -	Request a Quote	40 V	15mA	900 mV @ 15 mA	Small Signal =< 200mA (Io), Any Speed	1 ns	200 nA @ 40 V	2.2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
PVRM05C	Sanken Electric USA Inc.	RECTIFIER DIODES FOR SOLAR CELLS Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BSDD08G65E2	Bourns Inc.	DIODE SCHOT SIC 650V 8A TO252 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 267pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock14 970	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 175°C

1N4003 BK

Central Semiconductor Corp

DIODE GEN PURPOSE DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-204AL, DO-41, Axial

Stock3 088

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

VS-STT250M16MPBF

Vishay Semiconductor Diodes Division

MODULE DIODE MAP COMPRESSED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock5 488

-

1N4002GP-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock4 784

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 150°C

D6020L53

Littelfuse Inc.

DIODE GEN PURP 600V 12.7A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12.7A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 12.7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab, Formed Leads
Supplier Device Package: TO-220 Isolated Tab
Operating Temperature - Junction: -40°C ~ 125°C

paquet: TO-220-3 Isolated Tab, Formed Leads

Stock4 736

600V

12.7A

1.6V @ 12.7A

Standard Recovery >500ns, > 200mA (Io)

4µs

10µA @ 600V

-

Through Hole

TO-220-3 Isolated Tab, Formed Leads

TO-220 Isolated Tab

-40°C ~ 125°C

A330M

Powerex Inc.

DIODE GEN PURP 600V 1200A DO200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1200A
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 200°C

paquet: DO-200AA, A-PUK

Stock3 344

600V

1200A

-

Chassis Mount

DO-200AA, A-PUK

-

-40°C ~ 200°C

R7S00612XX

Powerex Inc.

DIODE MODULE 600V 1200A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1200A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10µs
Current - Reverse Leakage @ Vr: 50mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

paquet: DO-200AA, A-PUK

Stock3 680

600V

1200A

1.6V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

10µs

50mA @ 600V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

VS-16FL20S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 16A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AA, DO-4, Stud

Stock2 496

200V

16A

1.4V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

50µA @ 200V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

UG12HTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 12A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 30µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

paquet: TO-220-2

Stock3 280

500V

12A

1.75V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

30µA @ 500V

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

1N5417TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock5 504

200V

3A

1.5V @ 9A

Standard Recovery >500ns, > 200mA (Io)

100ns

1µA @ 200V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

ES2GAHR3G

TSC America Inc.

DIODE, SUPER FAST, 2A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock3 200

400V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 400V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

PR1503-T

Diodes Incorporated

DIODE GEN PURP 200V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-204AC, DO-15, Axial

Stock5 872

200V

1.5A

1.2V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

S1GLHRTG

TSC America Inc.

DIODE, 1A, 400V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-219AB

Stock5 968

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 400V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

FR107G R0G

TSC America Inc.

DIODE, FAST, 1A, 1000V, 500NS, D

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock4 256

-

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SDM02M30LP3-7B

Diodes Incorporated

DIODE SCHOTTKY 30V 100MA 2-XFDFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6ns
Current - Reverse Leakage @ Vr: 400nA @ 30V
Capacitance @ Vr, F: 2.7pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XFDFN
Supplier Device Package: 2-X3-DFN0603
Operating Temperature - Junction: -55°C ~ 150°C

paquet: 2-XFDFN

Stock5 680

30V

100mA

450mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

1.6ns

400nA @ 30V

2.7pF @ 5V, 1MHz

Surface Mount

2-XFDFN

2-X3-DFN0603

-55°C ~ 150°C

RRE07VSM6STR

Rohm Semiconductor

DIODE GP 600V 700MA TUMD2SM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)

paquet: 2-SMD, Flat Lead

Stock3 200

600V

700mA

1.1V @ 700mA

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 600V

-

Surface Mount

2-SMD, Flat Lead

TUMD2SM

150°C (Max)

V30120SG-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-220-3

Stock7 440

120V

30A

1.28V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Through Hole

TO-220-3

TO-220AB

-40°C ~ 150°C

MBR745

Fairchild/ON Semiconductor

DIODE SCHOTTKY 45V 7.5A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-220-2

Stock2 143 776

45V

7.5A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Through Hole

TO-220-2

TO-220-2L

-65°C ~ 150°C

SBRT3M40P1-7

Diodes Incorporated

DIODE SBR 40V 3A POWERDI123

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -65°C ~ 150°C

paquet: POWERDI?123

Stock38 400

40V

3A

530mV @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

30µA @ 40V

-

Surface Mount

POWERDI?123

PowerDI? 123

-65°C ~ 150°C

FFH60UP60S3

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-247-3

Stock16 302

600V

60A

1.7V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

100µA @ 600V

-

Through Hole

TO-247-3

TO-247

-65°C ~ 150°C

MMBD4448-7-F

Diodes Incorporated

DIODE GEN PURP 75V 250MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-236-3, SC-59, SOT-23-3

Stock36 000

75V

250mA

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

2.5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-65°C ~ 150°C

RS07K-HM3-18

Vishay General Semiconductor - Diodes Division

DIODE GP 800V 500MA DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

800 V

500mA

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

300 ns

2 µA @ 800 V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

BYV95-3-EBT1124TAP

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 850V SOD57

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-

MBRS1045

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Request a Quote

45 V

10A

840 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 175°C

GP10-4005E-E3-54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

paquet: -

Request a Quote

600 V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

1N1585R

Solid State Inc.

DIODE GEN PURP REV 400V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

paquet: -

Request a Quote

400 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

SD101CW

Taiwan Semiconductor Corporation

SOD-123, 40V, 0.015A, SCHOTTKY D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 15mA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

paquet: -

Request a Quote

40 V

15mA

900 mV @ 15 mA

Small Signal =< 200mA (Io), Any Speed

1 ns

200 nA @ 40 V

2.2pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 125°C

PVRM05C

Sanken Electric USA Inc.

RECTIFIER DIODES FOR SOLAR CELLS

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-

BSDD08G65E2

Bourns Inc.

DIODE SCHOT SIC 650V 8A TO252

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 267pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Stock14 970

650 V

8A

1.7 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

267pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 175°C