Page 1141 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4248GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 160°C	paquet: DO-204AL, DO-41, Axial	Stock5 328	800V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 160°C
PR1501G-T	Diodes Incorporated	DIODE GEN PURP 50V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-204AC, DO-15, Axial	Stock3 312	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
50WQ03FNTRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 460mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5 504	30V	5.5A	460mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
D770N14T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 1200V 1590A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock3 392	-	-	-	-	-	-	-	-	-	-	-
1N4590R	Powerex Inc.	DIODE GEN PURP 400V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	paquet: DO-205AA, DO-8, Stud	Stock7 136	400V	150A	-	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
S40BR	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	paquet: DO-203AB, DO-5, Stud	Stock2 784	100V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
VF30100S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 100V ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-220-3 Isolated Tab	Stock7 488	100V	30A	910mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Through Hole	TO-220-3 Isolated Tab	ITO-220AB	-40°C ~ 150°C
HSM180JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 80V 1A DO214BA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 840mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-214BA	Stock2 592	80V	1A	840mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 80V	-	Surface Mount	DO-214BA	DO-214BA	-55°C ~ 175°C
SS10P6HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 7A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 670mV @ 7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 560pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock6 624	60V	7A	670mV @ 7A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	560pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
RS2G/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AA, SMB	Stock4 320	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RM 1B	Sanken	DIODE GEN PURP 800V 800MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	paquet: Axial	Stock4 032	800V	800mA	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
AM01ZV	Sanken	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	paquet: Axial	Stock7 152	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
SK210AHM2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AC, SMA	Stock3 520	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BCP56-16TF	Nexperia USA Inc.	BCP56-16T/SOT223/SC-73 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock7 056	-	-	-	-	-	-	-	-	-	-	-
VS-CPU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X30A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-247-3	Stock2 640	600V	30A	1.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
SRF1060 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-220-3 Full Pack, Isolated Tab	Stock7 584	60V	10A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
BYV25D-600,118	WeEn Semiconductors	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: 150°C (Max)	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock64 626	600V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	150°C (Max)
CMOD2004 TR	Central Semiconductor Corp	DIODE GEN PURP 240V 200MA SOD523 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 240V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 240V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	paquet: SC-79, SOD-523	Stock53 712	240V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 240V	5pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
S2B-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AA, SMB	Stock210 960	100V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
10A02-T	Diodes Incorporated	DIODE GEN PURP 100V 10A R6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -65°C ~ 150°C	paquet: R6, Axial	Stock48 000	100V	10A	1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	150pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-65°C ~ 150°C
WNSC2D151200W6Q	WeEn Semiconductors	WNSC2D151200W/TO247-2L/STANDARD Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 150 µA @ 1200 V Capacitance @ Vr, F: 700pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C	paquet: -	Request a Quote	1200 V	15A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	700pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	175°C
NTE5871	NTE Electronics, Inc	DIODE GEN PURP 50V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	50 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 50 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
PMEG100T20ELP-QX	Nexperia USA Inc.	DIODE SCHOTT 100V 2A SOD128/CFP5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Current - Reverse Leakage @ Vr: 1.25 µA @ 100 V Capacitance @ Vr, F: 200pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	paquet: -	Stock8 514	100 V	2A	800 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	12 ns	1.25 µA @ 100 V	200pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C
CRG07-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 700MA S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 175°C (Max)	paquet: -	Stock13 140	400 V	700mA	1.1 V @ 700 mA	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	175°C (Max)
ES2BWF-HF	Comchip Technology	DIODE GEN PURP 100V 2A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	100 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	30pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
JANTX1N6857UR-1	Microchip Technology	DIODE SCHOTTKY 16V 150MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 nA @ 16 V Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	16 V	150mA	750 mV @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	4.5pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
JANTXV1N5712-1	Microchip Technology	DIODE SCHOTTKY 16V 33MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 nA @ 16 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	16 V	33mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 150°C
SF32-TP	Micro Commercial Co	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Request a Quote	100 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C

1N4248GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C

paquet: DO-204AL, DO-41, Axial

Stock5 328

800V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 800V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 160°C

PR1501G-T

Diodes Incorporated

DIODE GEN PURP 50V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-204AC, DO-15, Axial

Stock3 312

50V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

25pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

50WQ03FNTRR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5.5A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5 504

30V

5.5A

460mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

D770N14T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 1200V 1590A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock3 392

-

1N4590R

Powerex Inc.

DIODE GEN PURP 400V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

paquet: DO-205AA, DO-8, Stud

Stock7 136

400V

150A

-

Standard Recovery >500ns, > 200mA (Io)

-

9mA @ 400V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

S40BR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C

paquet: DO-203AB, DO-5, Stud

Stock2 784

100V

40A

1.1V @ 40A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 190°C

VF30100S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 100V ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-220-3 Isolated Tab

Stock7 488

100V

30A

910mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Through Hole

TO-220-3 Isolated Tab

ITO-220AB

-40°C ~ 150°C

HSM180JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 80V 1A DO214BA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214BA

Stock2 592

80V

1A

840mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 80V

-

Surface Mount

DO-214BA

-55°C ~ 175°C

SS10P6HM3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 7A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock6 624

60V

7A

670mV @ 7A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 60V

560pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

RS2G/1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

Stock4 320

400V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RM 1B

Sanken

DIODE GEN PURP 800V 800MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

paquet: Axial

Stock4 032

800V

800mA

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

-

Through Hole

Axial

-40°C ~ 150°C

AM01ZV

Sanken

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

paquet: Axial

Stock7 152

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

SK210AHM2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AC, SMA

Stock3 520

100V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BCP56-16TF

Nexperia USA Inc.

BCP56-16T/SOT223/SC-73

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock7 056

-

VS-CPU6006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-247-3

Stock2 640

600V

30A

1.75V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

30µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

SRF1060 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-220-3 Full Pack, Isolated Tab

Stock7 584

60V

10A

700mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

BYV25D-600,118

WeEn Semiconductors

DIODE GEN PURP 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: 150°C (Max)

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock64 626

600V

5A

1.3V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

150°C (Max)

CMOD2004 TR

Central Semiconductor Corp

DIODE GEN PURP 240V 200MA SOD523

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 240V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 240V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SC-79, SOD-523

Stock53 712

240V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 240V

5pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-65°C ~ 150°C

S2B-E3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

Stock210 960

100V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 100V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

10A02-T

Diodes Incorporated

DIODE GEN PURP 100V 10A R6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -65°C ~ 150°C

paquet: R6, Axial

Stock48 000

100V

10A

1V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

150pF @ 4V, 1MHz

Through Hole

R6, Axial

R-6

-65°C ~ 150°C

WNSC2D151200W6Q

WeEn Semiconductors

WNSC2D151200W/TO247-2L/STANDARD

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C

paquet: -

Request a Quote

1200 V

15A

1.7 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

150 µA @ 1200 V

700pF @ 1V, 1MHz

Through Hole

TO-247-2

175°C

NTE5871

NTE Electronics, Inc

DIODE GEN PURP 50V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

50 V

12A

1.26 V @ 38 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 50 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

PMEG100T20ELP-QX

Nexperia USA Inc.

DIODE SCHOTT 100V 2A SOD128/CFP5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Current - Reverse Leakage @ Vr: 1.25 µA @ 100 V
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C

paquet: -

Stock8 514

100 V

2A

800 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

12 ns

1.25 µA @ 100 V

200pF @ 1V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

175°C

CRG07-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 700MA S-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)

paquet: -

Stock13 140

400 V

700mA

1.1 V @ 700 mA

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

175°C (Max)

ES2BWF-HF

Comchip Technology

DIODE GEN PURP 100V 2A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

100 V

2A

1 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 100 V

30pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C

JANTX1N6857UR-1

Microchip Technology

DIODE SCHOTTKY 16V 150MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 16 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

16 V

150mA

750 mV @ 35 mA

Small Signal =< 200mA (Io), Any Speed

-

150 nA @ 16 V

4.5pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 150°C

JANTXV1N5712-1

Microchip Technology

DIODE SCHOTTKY 16V 33MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 16 V
Current - Average Rectified (Io): 33mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

16 V

33mA

1 V @ 35 mA

Small Signal =< 200mA (Io), Any Speed

-

150 nA @ 16 V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 150°C

SF32-TP

Micro Commercial Co

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

paquet: -

Request a Quote

100 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 100 V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C