Page 1076 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N486B TR	Central Semiconductor Corp	DIODE RECT GP 250V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50nA @ 250V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 200°C	paquet: DO-204AL, DO-41, Axial	Stock4 432	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50nA @ 250V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 200°C
VS-31DQ09G	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 3.3A C16 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3.3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: 110pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: C-16 Operating Temperature - Junction: -40°C ~ 150°C	paquet: DO-201AD, Axial	Stock3 456	90V	3.3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	110pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	C-16	-40°C ~ 150°C
RS1PJHE3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-220AA	Stock6 384	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
MPG06GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	paquet: MPG06, Axial	Stock6 112	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MBRB7H45-E3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4 720	45V	7.5A	630mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
MBR735	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 7.5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-220-2	Stock560 400	35V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
D820N26T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 2000V 1273A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock5 360	-	-	-	-	-	-	-	-	-	-	-
VI20120S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 120V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.12V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3 344	120V	20A	1.12V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 120V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
SF5403-TR	Vishay Semiconductor Diodes Division	DIODE AVAL 3A 300V SOD-64 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock2 880	300V	3A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
BYW85-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock3 504	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	7.5µs	1µA @ 800V	60pF @ 4V, 1MHz	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
GL41JHE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-213AB, MELF (Glass)	Stock7 808	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
MUR160A R1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 27pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-204AL, DO-41, Axial	Stock7 248	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
UF4003 R1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock2 560	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GI752-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	paquet: P600, Axial	Stock7 712	200V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 200V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
VS-8TQ080SPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 80V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 80V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19 968	80V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 80V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
MUR4100ERLG	ON Semiconductor	DIODE GEN PURP 1KV 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-201AA, DO-27, Axial	Stock2 003 352	1000V	4A	1.85V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	25µA @ 1000V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
STPS1H100U	STMicroelectronics	DIODE SCHOTTKY 100V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: 175°C (Max)	paquet: DO-214AA, SMB	Stock690 240	100V	1A	770mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	4µA @ 100V	-	Surface Mount	DO-214AA, SMB	SMB	175°C (Max)
MSASC25H30KS-TR	Microchip Technology	DIODE POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FES1GE	Diodes Incorporated	DIODE GEN PURP 400V 1A F1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AA Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock7 329	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 400 V	14pF @ 4V, 1MHz	Surface Mount	DO-219AA	F1A (DO219AA)	-55°C ~ 150°C
1N5416-TR	Microchip Technology	DIODE GEN PURP 100V 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
RBLQ2MM10TFTR	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 175°C	paquet: -	Request a Quote	100 V	2A	770 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 100 V	50pF @ 4V, 1MHz	Surface Mount	SOD-123F	PMDU	175°C
SK24HE3-LTP	Micro Commercial Co	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 230pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Stock2 838	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	230pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
UES1303SM-TR	Microchip Technology	DIODE GEN PURP 150V 8A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -	paquet: -	Request a Quote	150 V	8A	925 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	Surface Mount	SQ-MELF, E	D-5B	-
MUR260K_AY_00001	Panjit International Inc.	DIODE GEN PURP 600V 2A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote	600 V	2A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 175°C
SK310SMA-3G	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	paquet: -	Request a Quote	100 V	3A	790 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
SF61G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	50 V	6A	975 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RS1GLW	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock59 739	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
RKR0503AKH-P1	Renesas Electronics Corporation	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

1N486B TR

Central Semiconductor Corp

DIODE RECT GP 250V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50nA @ 250V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 200°C

paquet: DO-204AL, DO-41, Axial

Stock4 432

250V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

50nA @ 250V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 200°C

VS-31DQ09G

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 3.3A C16

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3.3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: 110pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: C-16
Operating Temperature - Junction: -40°C ~ 150°C

paquet: DO-201AD, Axial

Stock3 456

90V

3.3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

110pF @ 5V, 1MHz

Through Hole

DO-201AD, Axial

C-16

-40°C ~ 150°C

RS1PJHE3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-220AA

Stock6 384

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 600V

9pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

MPG06GHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

paquet: MPG06, Axial

Stock6 112

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 400V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

MBRB7H45-E3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4 720

45V

7.5A

630mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

MBR735

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-220-2

Stock560 400

35V

7.5A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

D820N26T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 2000V 1273A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock5 360

-

VI20120S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 120V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.12V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3 344

120V

20A

1.12V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 120V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 150°C

SF5403-TR

Vishay Semiconductor Diodes Division

DIODE AVAL 3A 300V SOD-64

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock2 880

300V

3A

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

BYW85-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock3 504

800V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

7.5µs

1µA @ 800V

60pF @ 4V, 1MHz

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

GL41JHE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-213AB, MELF (Glass)

Stock7 808

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

MUR160A R1G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-204AL, DO-41, Axial

Stock7 248

600V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 600V

27pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 175°C

UF4003 R1G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock2 560

200V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

GI752-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

paquet: P600, Axial

Stock7 712

200V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 200V

150pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

VS-8TQ080SPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 80V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19 968

80V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 80V

500pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

MUR4100ERLG

ON Semiconductor

DIODE GEN PURP 1KV 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-201AA, DO-27, Axial

Stock2 003 352

1000V

4A

1.85V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

25µA @ 1000V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

STPS1H100U

STMicroelectronics

DIODE SCHOTTKY 100V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)

paquet: DO-214AA, SMB

Stock690 240

100V

1A

770mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

4µA @ 100V

-

Surface Mount

DO-214AA, SMB

SMB

175°C (Max)

MSASC25H30KS-TR

Microchip Technology

DIODE POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-

FES1GE

Diodes Incorporated

DIODE GEN PURP 400V 1A F1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AA
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock7 329

400 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 400 V

14pF @ 4V, 1MHz

Surface Mount

DO-219AA

F1A (DO219AA)

-55°C ~ 150°C

1N5416-TR

Microchip Technology

DIODE GEN PURP 100V 3A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

100 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 100 V

-

Through Hole

B, Axial

-65°C ~ 175°C

RBLQ2MM10TFTR

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C

paquet: -

Request a Quote

100 V

2A

770 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 100 V

50pF @ 4V, 1MHz

Surface Mount

SOD-123F

PMDU

175°C

SK24HE3-LTP

Micro Commercial Co

DIODE SCHOTTKY 40V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

paquet: -

Stock2 838

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

230pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

UES1303SM-TR

Microchip Technology

DIODE GEN PURP 150V 8A D-5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -

paquet: -

Request a Quote

150 V

8A

925 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

-

Surface Mount

SQ-MELF, E

D-5B

-

MUR260K_AY_00001

Panjit International Inc.

DIODE GEN PURP 600V 2A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Request a Quote

600 V

2A

1.35 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 600 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 175°C

SK310SMA-3G

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

paquet: -

Request a Quote

100 V

3A

790 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 µA @ 100 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

SF61G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 6A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

50 V

6A

975 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

RS1GLW

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD123W

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Stock59 739

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

-

Surface Mount

SOD-123W

-55°C ~ 175°C

RKR0503AKH-P1

Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Request a Quote

-