Page 1035 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS1P5LHE3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 1A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-220AA	Stock2 272	50V	1A	590mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
GP10MEHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-204AL, DO-41, Axial	Stock4 032	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1000V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SS8P3L-E3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock36 648	30V	8A	570mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
MURA105T3	ON Semiconductor	DIODE GEN PURP 50V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-214AC, SMA	Stock94 680	50V	2A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 50V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
MBRD330TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3 216	30V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
B390-13	Diodes Incorporated	DIODE SCHOTTKY 90V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 90V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	paquet: DO-214AB, SMC	Stock2 816	90V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	100pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 125°C
1N4588R	GeneSiC Semiconductor	DIODE GEN REV 200V 150A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9.5mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	paquet: DO-205AA, DO-8, Stud	Stock7 456	200V	150A	1.5V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	9.5mA @ 200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
VS-EPH3006HN3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 30A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-247-2	Stock5 584	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-65°C ~ 175°C
SFS1608G MNG	TSC America Inc.	DIODE, SUPER FAST, 16A, 600V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4 304	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
ES3C-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AB, SMC	Stock5 296	150V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
1N5406G B0G	TSC America Inc.	DIODE, 3A, 600V, DO-201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-201AD, Axial	Stock7 456	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SB2D-M3/52T	Vishay Semiconductor Diodes Division	DIODE RECT 2A 200V DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AA, SMB	Stock3 264	200V	2A (DC)	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GB R5G	TSC America Inc.	DIODE, 1A, 400V, DO-214AA (SMB) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AA, SMB	Stock2 112	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BA157GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-204AL, DO-41, Axial	Stock2 640	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4006GHA0G	TSC America Inc.	DIODE, 1A, 800V, AEC-Q101, DO-20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock3 472	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RB060L-40TE25	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max)	paquet: DO-214AC, SMA	Stock336 360	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	DO-214AC, SMA	PMDS	125°C (Max)
BAS70-02V-V-G-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 70V 100MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C (Max)	paquet: SC-79, SOD-523	Stock364 800	70V	100mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	125°C (Max)
1N5805US-TR	Microchip Technology	DIODE GEN PURP 135V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 135 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 125 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	135 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 125 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTX1N6776	Microchip Technology	DIODE GEN PURP 150V 15A TO257 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 mV Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	150 V	15A	1.15 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 800 mV	300pF @ 5V, 1MHz	Through Hole	TO-257-3	TO-257	-65°C ~ 150°C
MGR1204-BP	Micro Commercial Co	DIODE GEN PURP 400V 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	400 V	12A	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VS-E5TH2106S2LHM3	Vishay General Semiconductor - Diodes Division	20A, 600V, "H" SERIES GEN 5 FRED Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 47 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock2 538	600 V	20A	1.68 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	47 ns	10 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
SMS1100	Diotec Semiconductor	DIODE SCHOT 100V 1A MELF DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB (Plastic) Operating Temperature - Junction: -50°C ~ 150°C	paquet: -	Stock9 618	100 V	1A	790 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB (Plastic)	-50°C ~ 150°C
SE100PWB-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 10A SLIMDPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6 µs Current - Reverse Leakage @ Vr: 20 µA @ 100 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote	100 V	10A	1.14 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	2.6 µs	20 µA @ 100 V	78pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C
V12P103-M3-I	Vishay	12A, 100V, SMPC TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 680 µA @ 100 V Capacitance @ Vr, F: 1900pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	paquet: -	Stock19 500	100 V	12A	640 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	680 µA @ 100 V	1900pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
NDSH30120C-F155	onsemi	SIC DIODE GEN2.0 1200V TO247-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 38A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV Capacitance @ Vr, F: 1961pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote	1200 V	38A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1.2 kV	1961pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
RB561VM-40TE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 500MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	paquet: -	Stock352 011	40 V	500mA	560 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
CUS03-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 700MA US-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 520 mV @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 45pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40°C ~ 150°C	paquet: -	Request a Quote	40 V	700mA	520 mV @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	45pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
SE100PWTJ-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GP 600V 2.7A SLIMDPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2.7A Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6 µs Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock14 400	600 V	2.7A	1.14 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	2.6 µs	20 µA @ 600 V	78pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C

SS1P5LHE3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-220AA

Stock2 272

50V

1A

590mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

-

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

GP10MEHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-204AL, DO-41, Axial

Stock4 032

1000V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1000V

7pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SS8P3L-E3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock36 648

30V

8A

570mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

MURA105T3

ON Semiconductor

DIODE GEN PURP 50V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-214AC, SMA

Stock94 680

50V

2A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 50V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

MBRD330TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3 216

30V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

B390-13

Diodes Incorporated

DIODE SCHOTTKY 90V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 90V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C

paquet: DO-214AB, SMC

Stock2 816

90V

3A

790mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 90V

100pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 125°C

1N4588R

GeneSiC Semiconductor

DIODE GEN REV 200V 150A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9.5mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

paquet: DO-205AA, DO-8, Stud

Stock7 456

200V

150A

1.5V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

9.5mA @ 200V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

VS-EPH3006HN3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 30A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-247-2

Stock5 584

600V

30A

2.65V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

26ns

30µA @ 600V

-

Through Hole

TO-247-2

TO-247AC Modified

-65°C ~ 175°C

SFS1608G MNG

TSC America Inc.

DIODE, SUPER FAST, 16A, 600V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4 304

600V

16A

1.7V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

60pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

ES3C-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AB, SMC

Stock5 296

150V

3A

900mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 150V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

1N5406G B0G

TSC America Inc.

DIODE, 3A, 600V, DO-201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-201AD, Axial

Stock7 456

600V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

25pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SB2D-M3/52T

Vishay Semiconductor Diodes Division

DIODE RECT 2A 200V DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

Stock3 264

200V

2A (DC)

1.15V @ 2A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 200V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

S1GB R5G

TSC America Inc.

DIODE, 1A, 400V, DO-214AA (SMB)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

Stock2 112

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

BA157GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-204AL, DO-41, Axial

Stock2 640

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

1N4006GHA0G

TSC America Inc.

DIODE, 1A, 800V, AEC-Q101, DO-20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock3 472

800V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

RB060L-40TE25

Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)

paquet: DO-214AC, SMA

Stock336 360

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

-

Surface Mount

DO-214AC, SMA

PMDS

125°C (Max)

BAS70-02V-V-G-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 70V 100MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)

paquet: SC-79, SOD-523

Stock364 800

70V

100mA

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

5ns

100nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

125°C (Max)

1N5805US-TR

Microchip Technology

DIODE GEN PURP 135V 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 135 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 125 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

135 V

1A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 125 V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

JANTX1N6776

Microchip Technology

DIODE GEN PURP 150V 15A TO257

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 mV
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

150 V

15A

1.15 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 800 mV

300pF @ 5V, 1MHz

Through Hole

TO-257-3

TO-257

-65°C ~ 150°C

MGR1204-BP

Micro Commercial Co

DIODE GEN PURP 400V 12A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

400 V

12A

1.1 V @ 12 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 400 V

100pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

VS-E5TH2106S2LHM3

Vishay General Semiconductor - Diodes Division

20A, 600V, "H" SERIES GEN 5 FRED

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Stock2 538

600 V

20A

1.68 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

47 ns

10 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 175°C

SMS1100

Diotec Semiconductor

DIODE SCHOT 100V 1A MELF DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB (Plastic)
Operating Temperature - Junction: -50°C ~ 150°C

paquet: -

Stock9 618

100 V

1A

790 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB (Plastic)

-50°C ~ 150°C

SE100PWB-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 10A SLIMDPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Request a Quote

100 V

10A

1.14 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

2.6 µs

20 µA @ 100 V

78pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-55°C ~ 175°C

V12P103-M3-I

Vishay

12A, 100V, SMPC TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 680 µA @ 100 V
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: -

Stock19 500

100 V

12A

640 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

680 µA @ 100 V

1900pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

NDSH30120C-F155

onsemi

SIC DIODE GEN2.0 1200V TO247-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 38A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV
Capacitance @ Vr, F: 1961pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Request a Quote

1200 V

38A

1.75 V @ 30 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1.2 kV

1961pF @ 1V, 100kHz

Through Hole

TO-247-2

-55°C ~ 175°C

RB561VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)

paquet: -

Stock352 011

40 V

500mA

560 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

UMD2

125°C (Max)

CUS03-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 700MA US-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 700 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 45pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: -

Request a Quote

40 V

700mA

520 mV @ 700 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

45pF @ 10V, 1MHz

Surface Mount

SC-76, SOD-323

US-FLAT (1.25x2.5)

-40°C ~ 150°C

SE100PWTJ-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GP 600V 2.7A SLIMDPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2.7A
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Stock14 400

600 V

2.7A

1.14 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

2.6 µs

20 µA @ 600 V

78pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-55°C ~ 175°C