Produits Diodes Incorporated

FN7500045

Diodes Incorporated

OSCILLATOR XO 75.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 75MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 2.5V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 35mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

paquet: 4-SMD, No Lead

FDA620006

Diodes Incorporated

OSCILLATOR XO 106.25MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 106.25MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 2.5V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 35mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

paquet: 4-SMD, No Lead

DMT6009LPS-13

Diodes Incorporated

MOSFET N-CHA 60V 10.6A POWERDI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

paquet: 8-PowerTDFN

DMN3016LDV-7

Diodes Incorporated

MOSFET BVDSS: 25V 30V POWERDI333

• FET Type: 2 N-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PowerDI3333-8

paquet: 8-PowerVDFN

FMMTA42TC

Diodes Incorporated

TRANS NPN 300V 0.2A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 330mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

ZXTN25060BZQTA

Diodes Incorporated

TRANS NPN 60V 5A SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 305mV @ 500mA, 5A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
• Power - Max: 1.1W
• Frequency - Transition: 185MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

paquet: TO-243AA

ZXTP25140BFHTA

Diodes Incorporated

TRANS PNP 140V 1A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 140V
• Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 75MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

DDTA142JU-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 470
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

paquet: SC-70, SOT-323

DDTA123JE-7-F

Diodes Incorporated

TRANS PREBIAS PNP 150MW SOT523

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

paquet: SOT-523

ZDT6790TA

Diodes Incorporated

TRANS NPN/PNP 45V/40V 2A SM8

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 45V, 40V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A / 750mV @ 50mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V / 300 @ 10mA, 2V
• Power - Max: 2.75W
• Frequency - Transition: 150MHz, 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-223-8
• Supplier Device Package: SM8

paquet: SOT-223-8

MMBZ5256BW-7-F

Diodes Incorporated

DIODE ZENER 30V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 49 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

paquet: SC-70, SOT-323

DDZ9708-7

Diodes Incorporated

DIODE ZENER 22V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

paquet: SOD-123

DDZ18CSF-7

Diodes Incorporated

DIODE ZENER 17.88V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 17.88V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 70nA @ 16.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

paquet: SC-90, SOD-323F

ES1JP1-7

Diodes Incorporated

DIODE STD 1A SMD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

paquet: -

RS1G-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AC, SMA

MBRB1535CT-T

Diodes Incorporated

DIODE ARRAY SCHOTTKY 35V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 100µA @ 35V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GBU4005

Diodes Incorporated

RECT BRIDGE GPP 4A 50V GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

paquet: 4-SIP, GBU

GBJ1001-F

Diodes Incorporated

RECT BRIDGE GPP 10A 100V GBJ

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

paquet: 4-SIP, GBJ

APX803L-44SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 4.4V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

74AHC595S16-13

Diodes Incorporated

AHC HIGH PIN COUNT SO-16

• Logic Type: Shift Register
• Output Type: Tri-State
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Serial to Parallel, Serial
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

paquet: 16-SOIC (0.154", 3.90mm Width)

PS4066AEEE

Diodes Incorporated

IC QUAD SPST ANALOG SW 16-QSOP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 45 Ohm
• Channel-to-Channel Matching (ΔRon): 500 mOhm
• Voltage - Supply, Single (V+): 3 V ~ 16 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 100ns, 75ns
• -3db Bandwidth: 100MHz
• Charge Injection: 2pC
• Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
• Current - Leakage (IS(off)) (Max): 100pA
• Crosstalk: -86dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-QSOP

paquet: 16-SSOP (0.154", 3.90mm Width)

TB1500H-13

Diodes Incorporated

THYRISTOR PROTECT BIDIR 100A SMB

• Voltage - Breakover: 180V
• Voltage - Off State: 140V
• Voltage - On State: 3.5V
• Current - Peak Pulse (8/20µs): 400A
• Current - Peak Pulse (10/1000µs): 100A
• Current - Hold (Ih): 150mA
• Number of Elements: 1
• Capacitance: 120pF
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB

paquet: DO-214AA, SMB

D1213A-04TS-7

Diodes Incorporated

TVS DIODE 3.3VWM 10VC TSOT26

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.3V
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 10V (Typ)
• Current - Peak Pulse (10/1000µs): 1A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: Yes
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-26

paquet: SOT-23-6 Thin, TSOT-23-6

AP2401B34DNTR-G1

Diodes Incorporated

IC CURRENT LIMIT SWITCH

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

PT7M8218B09TAE

Diodes Incorporated

IC REG LINEAR 0.9V 300MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.18V @ 150mA (Typ)
• Current - Output: 300mA
• Current - Quiescent (Iq): 50µA
• Current - Supply (Max): -
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

paquet: SC-74A, SOT-753

DMN2710UFB-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DFN1006-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 720mW (Ta)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X1-DFN1006-3
• Package / Case: 3-UFDFN

paquet: -

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AP7375Q-33Y-13

Diodes Incorporated

LDO CMOS LOWCURR SOT89 T&R 2.5K

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 8 µA
• Current - Supply (Max): -
• PSRR: 85dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

paquet: -

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PR1007R-T

Diodes Incorporated

DIODE GEN PURP 1KV 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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