Produits Diodes Incorporated

FD4000136

Diodes Incorporated

OSCILLATOR XO 40.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 40MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 1.8V
• Frequency Stability: ±20ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 25mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

paquet: 4-SMD, No Lead

FK2500019

Diodes Incorporated

OSCILLATOR XO 25.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 25MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 10mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.045" (1.15mm)

paquet: 4-SMD, No Lead

FL2700102Z

Diodes Incorporated

CRYSTAL 27.0000MHZ 12PF SMD

• Type: MHz Crystal
• Frequency: 27MHz
• Frequency Stability: ±30ppm
• Frequency Tolerance: ±30ppm
• Load Capacitance: 12pF
• ESR (Equivalent Series Resistance): 60 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -20°C ~ 70°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.030" (0.75mm)

paquet: 4-SMD, No Lead

ZXMD63N03XTA

Diodes Incorporated

MOSFET 2N-CH 30V 2.3A 8-MSOP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.3A
• Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
• Power - Max: 1.04W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

FCX1047ATA

Diodes Incorporated

TRANS NPN 10V 4A SOT-89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 10V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 5A
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

paquet: TO-243AA

DDTC115EUA-7

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): 100k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

paquet: SC-70, SOT-323

ZDT1147TA

Diodes Incorporated

TRANS 2PNP 12V 5A SOT223

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 380mV @ 50mA, 5A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
• Power - Max: 2.75W
• Frequency - Transition: 115MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

paquet: TO-261-4, TO-261AA

ZDT6705TA

Diodes Incorporated

TRANS NPN/PNP DARL 120V 1A SM8

• Transistor Type: NPN, PNP Darlington (Dual)
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
• Power - Max: 2.75W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-223-8
• Supplier Device Package: SM8

paquet: SOT-223-8

DDC143EH-7

Diodes Incorporated

TRANS 2NPN PREBIAS 0.15W SOT563

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

paquet: SOT-563, SOT-666

1N4751A-T

Diodes Incorporated

DIODE ZENER 30V 1W DO41

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

paquet: DO-204AL, DO-41, Axial

BZX84C10-7

Diodes Incorporated

DIODE ZENER 10V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±6%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

MMSZ5223B-7-F

Diodes Incorporated

DIODE ZENER 2.7V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 75µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

paquet: SOD-123

DL4003-13

Diodes Incorporated

DIODE GEN PURP 200V 1A MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-213AB, MELF

MBRB10100CT-13

Diodes Incorporated

DIODE SCHOTTKY 100V 10A D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AP7315-28SR-7

Diodes Incorporated

IC REG LINEAR 2.8V 150MA SOT23

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.29V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA ~ 100µA
• PSRR: 75dB (1kHz)
• Control Features: -
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

paquet: TO-236-3, SC-59, SOT-23-3

AP1701GWG-7

Diodes Incorporated

IC MPU RESET CIRC 2.25V SC59-3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: 100 ms Minimum
• Voltage - Threshold: 2.25V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3

paquet: TO-236-3, SC-59, SOT-23-3

AP2182AFGEG-7

Diodes Incorporated

IC PWR SW USB 2CH 1.5A 8-DFN

• Switch Type: USB Switch
• Number of Outputs: 2
• Ratio - Input:Output: 1:2
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 85 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-UDFN Exposed Pad
• Supplier Device Package: U-DFN3030-8 (Type E)

paquet: 8-UDFN Exposed Pad

PI3B16233A

Diodes Incorporated

IC 16:32-BIT FET BUS SW 56-TSSOP

• Type: Multiplexer/Demultiplexer
• Circuit: 8 x 1:2
• Independent Circuits: 2
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 56-TSSOP

paquet: 56-TFSOP (0.240", 6.10mm Width)

PI7C9X2G303ELAZXE

Diodes Incorporated

IC PCIE PACKET SWITCH TQFN

• Applications: Wireless
• Interface: JTAG
• Voltage - Supply: -
• Package / Case: 136-VFQFN Dual Rows, Exposed Pad
• Supplier Device Package: 136-aQFN (8x8)
• Mounting Type: Surface Mount

paquet: 136-VFQFN Dual Rows, Exposed Pad

PI5A124TEX-1413

Diodes Incorporated

IC SWITCH SPDT SOT23-6

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 1
• On-State Resistance (Max): 10 Ohm
• Channel-to-Channel Matching (ΔRon): 200 mOhm
• Voltage - Supply, Single (V+): 2 V ~ 6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 15ns, 7ns
• -3db Bandwidth: 326MHz
• Charge Injection: 1.6pC
• Channel Capacitance (CS(off), CD(off)): 5.5pF, 5.5pF
• Current - Leakage (IS(off)) (Max): 200pA (Typ)
• Crosstalk: -43dB @ 10MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

paquet: -

DFLT24A-7

Diodes Incorporated

TVS DIODE 24VWM POWERDI123

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 5.78A
• Power - Peak Pulse: 225W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123

paquet: POWERDI?123

PS7M809JTEX

Diodes Incorporated

IC CLOCK

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

PT7C4337BUEX

Diodes Incorporated

REAL TIME CLOCK MSOP-8 T&R 2.5K

• Type: -
• Features: -
• Memory Size: -
• Time Format: -
• Date Format: -
• Interface: -
• Voltage - Supply: -
• Voltage - Supply, Battery: -
• Current - Timekeeping (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

DMN3110SQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 740mW (Ta)
• Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: -

GBU25JL_HF

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBU TUB

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 25 A
• Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

paquet: -

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ZXMP10A17GTA

Diodes Incorporated

MOSFET P-CH 100V 1.7A SOT223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223-3
• Package / Case: TO-261-4, TO-261AA

paquet: -

DMTH46M7SFVW-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
• Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

paquet: -

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DMP2036UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

paquet: -

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