|
|
Alpha & Omega Semiconductor Inc. |
IGBT 1200V 20A TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 333W
- Switching Energy: 830µJ (off)
- Input Type: Standard
- Gate Charge: 60.5nC
- Td (on/off) @ 25°C: -/134ns
- Test Condition: 600V, 20A, 15 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
|
paquet: TO-247-3 |
Stock6 864 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IGBT 1350V 20A 340W TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1350V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
- Power - Max: 340W
- Switching Energy: 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 66nC
- Td (on/off) @ 25°C: -/156ns
- Test Condition: 600V, 20A, 15 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
|
paquet: TO-247-3 |
Stock7 356 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3x3)
- Package / Case: 8-VDFN Exposed Pad
|
paquet: 8-VDFN Exposed Pad |
Stock2 464 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 18A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 424 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 13A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1633pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 510 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
|
paquet: TO-220-3 Full Pack |
Stock4 880 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 7A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
|
paquet: TO-220-3 Full Pack |
Stock17 364 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 12A 8DFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 4.1W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
paquet: 8-PowerSMD, Flat Leads |
Stock8 076 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 34A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 34A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3x3)
- Package / Case: 8-PowerVDFN
|
paquet: 8-PowerVDFN |
Stock3 584 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N CH 30V 18A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock4 720 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 27A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1294pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
paquet: TO-247-3 |
Stock6 192 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
paquet: TO-220-3 |
Stock28 050 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 28A 8-DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
|
paquet: 8-PowerSMD, Flat Leads |
Stock46 986 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.6A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock7 952 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 9.1A/10A 8DFN
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A
- Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
- Power - Max: 1.9W, 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (5x6)
|
paquet: 8-PowerVDFN |
Stock5 424 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 5A 6TSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
paquet: SC-74, SOT-457 |
Stock629 016 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 40V 6A/5A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A, 5A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock372 840 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC BATT PROTECTION LI-ION 6DFN
- Function: Battery Protection
- Battery Chemistry: Lithium-Ion/Polymer
- Number of Cells: 1
- Fault Protection: Over Current
- Interface: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-WFDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x4)
|
paquet: 6-WFDFN Exposed Pad |
Stock7 312 |
|
|
|
Alpha & Omega Semiconductor Inc. |
TVS DIODE
- Type: -
- Unidirectional Channels: -
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): -
- Voltage - Breakdown (Min): -
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: -
- Applications: -
- Capacitance @ Frequency: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
paquet: - |
Stock69 000 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC REG BUCK SYNC 15A 24V COT
- Function: -
- Output Configuration: -
- Topology: -
- Output Type: -
- Number of Outputs: -
- Voltage - Input (Min): -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Current - Output: -
- Frequency - Switching: -
- Synchronous Rectifier: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
paquet: - |
Stock3 104 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC REG BUCK SYNC 8SOIC
- Function: -
- Output Configuration: -
- Topology: -
- Output Type: -
- Number of Outputs: -
- Voltage - Input (Min): -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Current - Output: -
- Frequency - Switching: -
- Synchronous Rectifier: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
paquet: - |
Stock7 696 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
paquet: - |
Stock15 471 |
|
|
|
Alpha & Omega Semiconductor Inc. |
25V/55A DRMOS 3.3V/5V PWM IN QFN
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive, Capacitive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 55A
- Current - Peak Output: 120A
- Voltage - Supply: 4.5V ~ 5.5V
- Voltage - Load: 2.5V ~ 25V
- Operating Temperature: -40°C ~ 150°C (TA)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 31-PowerVFQFN Module
- Supplier Device Package: 31-QFN (5x5)
|
paquet: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 5X6 DFN
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
paquet: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 106A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 277W (Tc)
- Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
paquet: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
paquet: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
5.5V/10A SINGLE CHANNEL SMART LO
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
|
paquet: - |
Stock15 111 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IGBT 40A
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
- Power - Max: 600 W
- Switching Energy: 2.5mJ (on), 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 202 nC
- Td (on/off) @ 25°C: 53ns/210ns
- Test Condition: 600V, 40A, 7.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
|
paquet: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
25V/65A DRMOS SMOD EN CONTROL QF
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive, Capacitive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 65A
- Current - Peak Output: 120A
- Voltage - Supply: 4.5V ~ 5.5V
- Voltage - Load: 4.5V ~ 25V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 31-PowerVFQFN Module
- Supplier Device Package: 31-QFN (5x5)
|
paquet: - |
Stock8 970 |
|